The pinewood nematode, Bursaphelenchus xylophilus (Steiner and Buhrer) Nickle (Aphelenchida: Parasitaphelenchidae), is a major disease of pines forests in China. Its vector, Monochamus alternatus Hope (Coleoptera: Cerambycidae), has been the focus of an intensive study to improve the efficiency of the parasitoid Scleroderma guani Xiao and Wu (Hymenoptera: Bethylidae) by using the parasitoid both as a larval parasitoid in its own right and additionally as a vector for the entomophagous pathogen Metarhizium anisopliae (Metchnikoff) Sorokin (Clavicipitaceae). Twenty-one M. anisopliae strains were screened and the best four tested for sporulation capabilities at a range of temperatures. The best strain was then evaluated at several sporulation concentrations to define the lethal concentration 50 (LC50) against the larvae of M. alternatus. Scleroderma guani was inoculated with the best strain and tested against larvae of M. alternatus, which were constrained singly in glass vials. Three S. guani females per vial infected with M. anisopliae (strain 789) were shown to cause the death of 100% of the M. alternatus larvae they were exposed to as compared exposures to just one or two infected S. guani females per vial. This demonstrates a successful interaction of two biocontrol agents for the control of the pinewood nematode vector M. alternatus.

Commensurate BaTiO3/SrTiO3 superlattices were grown by reactive molecular-beam epitaxy on four different substrates: TiO2-terminated (001) SrTiO3, (101) DyScO3, (101) GdScO3, and (101) SmScO3. With the aid of reflection high-energy electron diffraction (RHEED), precise single-monolayer doses of BaO, SrO, and TiO2 were deposited sequentially to create commensurate BaTiO3/SrTiO3 superlattices with a variety of periodicities. X-ray diffraction (XRD) measurements exhibit clear superlattice peaks at the expected positions. The rocking curve full width half-maximum of the superlattices was as narrow as 7 arc s (0.002°). High-resolution transmission electron microscopy reveals nearly atomically abrupt interfaces. Temperature-dependent ultraviolet Raman and XRD were used to reveal the paraelectric-to-ferroelectric transition temperature (TC). Our results demonstrate the importance of finite size and strain effects on the TC of BaTiO3/SrTiO3 superlattices. In addition to probing finite size and strain effects, these heterostructures may be relevant for novel phonon devices, including mirrors, filters, and cavities for coherent phonon generation and control.

Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.

Out-of-phase boundaries (OPBs) are translation boundary defects characterized by a misregistry of a fraction of a unit cell dimension in neighboring regions of a crystal. Although rarely observed in the bulk, they are common in epitaxial films of complex crystals due to the physical constraint of the underlying substrate and a low degree of structural rearrangement during growth. OPBs can strongly affect properties, but no extensive studies of them are available. The morphology, structure, and nucleation mechanisms of OPBs in epitaxial films of layered complex oxides are presented with a review of published studies and new work. Morphological trends in two families of layered oxide phases are described. The atomic structure at OPBs is presented. OPBs may be introduced into a film during growth via the primary mechanisms that occur at film nucleation (steric, nucleation layer, a-bmisfit, and inclined-cmisfit) or after growth via the secondary nucleation mechanism (crystallographic shear in response to loss of a volatile component). Mechanism descriptions are accompanied by experimental examples. Alternative methods to the direct imaging of OPBs are also presented.

Phase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

The germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

GaN is a semiconductor material with promising applications in display and laser devices. GaNbased thin films have been grown by various methods and intensively investigated. Additionally, GaN nano particles have been prepared by various different methods. in this paper, we report our new finding of the structural modulation of GaN nano crystals induced by electron beam irradiation within a transmission electron microscope (TEM). The origin of the modulation structure is due to the ordering of N vacancies in the GaN nano crystals.

The GaN nano crystals were prepared by d.c arc plasma method. A Philips CM200 TEM with a field emission gun (FEG) operating at 200KV was used in this study. The GaN nano crystals normally show hexagonal shape (see Fig.la). Corresponding electron diffraction pattern along [0001] axis indicates the Wurtzite structure (see Fig. lb). It was unexpected that satellite reflections gradually appeared in the diffraction pattern after the GaN nano crystal had been exposed to the electron beam (see Fig.lc-d).

Y2O3 is a super refractory oxide with high thermal stability and finds various applications in optics and microelectronic devices. Recently, Eu-activated Y2O3 films attracted much research interest due to its promising applications in flat panel field emission displays. Epitaxial Y2O3:Eu thin films have been grown on LaA1O3(LAO). in this paper we report a transmission electron microscopy (TEM) study of Y2O3 nano tip-structure grown on LAO by pulsed laser deposition using stoichiometric YBa2Cu3O7-σ.a target under a low oxygen pressure. The experimental work was conducted within a JEOL2010F TEM equipped with an ED AX system.

Fig.l is a low magnification cross-section TEM image of the nano-tip structure grown on (001) LAO. The lattice parameters of the tips were calculated to be that of Y2O3 by using LAO as a standard for indexing the diffraction patterns. Nano electron beam diffraction patterns from the tips along [100] and [110] axis are shown in Fig.2a and Fig.2b, respectively, in agreement with the simulated ones using bulk Y2O3 structure.

Using a variety of in situ monitors and when possible adsorption-controlled growth conditions, layered oxide heterostructures including new compounds and metastable superlattices have been grown by reactive molecular beam epitaxy (MBE). The heteroepitaxial layers grown include Bi4Ti3 O12—SrTiO3 and Bi4Ti3O12—PbTiO3 Aurivillius phases, Srn+1TinO3n+1 Ruddlesden-Popper phases, and metastable PbTiO3 / SrTiO3 and BaTiO3 / SrTiO3 superlattices. Accurate composition control is key to the controlled growth of such structures, and to this end combinations of reflection high-energy electron diffraction (RHEED), atomic absorption spectroscopy (AA), a quartz crystal microbalance (QCM), and adsorption-controlled growth conditions were employed during growth. The structural perfection of the films has been investigated using in situ RHEED, four-circle x-ray diffraction, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (TEM).

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.

SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.