We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.
To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure no-reply@cambridge.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Ion adsorption-type rare earth deposits (IADs) are developed via prolonged weathering of REE-rich volcanic and metamorphic rocks. Intense magmatic activity which occurred during the Yanshanian (199.6–65.5 Ma) and Caledonian periods (542–359.2 Ma) provided an abundant material basis for the formation of IADs in South China. High concentrations of REE and the high proportion of ion-exchangeable REE were found in the Maofeng Mountain regolith, Guangzhou city. However, the geochemical patterns and mechanisms of REE enrichment in the regolith were still poorly understood. The present study investigated the regolith profile (0–8 m) developed in Maofeng Mountain based on metallogenic and geochemical characteristics, sequential extraction, and physical and chemical parameters of the regolith profile. The bedrock contained abundant REE resources (245–287 mg kg–1) and the chondrite-normalized REE patterns showed the enrichment of light REE (LREE) and negative cerium (Ce) and europium (Eu) anomalies. The distribution patterns of REE in the bedrock were inherited by the regolith. REE enrichment of the regolith occurred mainly in the completely weathered layer (B1, B2, and B3 horizons), particularly in the depth range 2.5–4.5 m (849–2391 mg kg–1). The position of REE enrichment was controlled by the soil pH (5.52–6.02), by the amount of kaolinite and halloysite, and by the permeability of the metamorphic rock. In the REE-enriched horizon (2–8 m), the REE were hosted mainly in ion-exchangeable fractions (75–2158 mg kg–1), representing 79% of the total REE. Given the pH of 4.73–6.02, REE fractionation driven by the adsorption of kaolinite was limited. Fe–Mn (oxyhydr)oxides played an important role in REE enrichment and the reducible fraction holds up to 21% (139 mg kg–1) of the total REE. The enrichment of LREE was observed in the reducible fraction potentially because of the preferential release of LREE from the LREE-bearing minerals (monazite) and then scavenged by Fe–Mn (oxyhydr)oxides. Positive Ce anomalies (Ce/Ce*: 10) were found in the reducible fraction because trivalent Ce was oxidized by Fe–Mn (oxyhydr)oxides to cerianite (CeO2). The present study helps to understand the enrichment and fractionation of REE in the IADs of South China.
Coronary artery aneurysms have been considered the most serious complication of Kawasaki disease. However, some coronary artery aneurysms do regress. Therefore, the ability to predict the expected time of coronary artery aneurysm regression is critical. Herein, we have created a nomogram prediction system to determine the early regression (<1 month) among patients with small to medium coronary artery aneurysms.
Methods:
Seventy-six Kawasaki disease patients identified with coronary artery aneurysms during the acute or subacute phase were included. All the patients who met inclusion criteria demonstrated regression of coronary artery aneurysms within the first-year post Kawasaki disease diagnosis. The clinical and laboratory parameters were compared between the groups of coronary artery aneurysms regression duration within and beyond 1 month. Multivariate logistic regression analysis was used to identify the independent parameters for early regression based on the results from the univariable analysis. Then nomogram prediction systems were established with associated receiver operating characteristic curves.
Results:
Among the 76 included patients, 40 cases recovered within 1 month. Haemoglobin, globulin, activated partial thromboplastin time, the number of lesions, location of the aneurysm, and coronary artery aneurysm size were identified as independent factors for early regression of coronary artery aneurysms in Kawasaki disease patients. The predictive nomogram models revealed a high efficacy in predicting early regression of coronary artery aneurysms.
Conclusion:
The size of coronary artery aneurysms, the number of lesions, and the location of aneurysms presented better predictive value for predicting coronary artery aneurysms regression. The nomogram system created from the identified risk factors successfully predicted early coronary artery aneurysm regression.
The present paper simplifies the naturally formed dunes (riverbeds) as large-scale three-dimensional staggered wavy walls to investigate the features of the accompanying secondary flows and streamwise vortices via large-eddy simulation. A comparison between the swirling strength and the mean velocities suggests where a secondary flow induces upwash or downwash motions. Moreover, we propose a pseudo-convex wall mechanism to interpret the directionality of the secondary flow. The centrifugal instability criterion is then used to reveal the generation of the streamwise vortices. Based on these analytical results, we found that the streamwise vortices are generated in the separation and reattachment points on both characteristic longitudinal–vertical and horizontal cross-sections, which is related to the curvature effect of the turbulent shear layer. Furthermore, the maximum Görtler number characterized by the ratio of centrifugal to viscous effects suggests that, for fixed ratio of spanwise- to streamwise-wavelength cases, the strongest centrifugal instability occurring on the longitudinal–vertical cross-section gradually dominates with the increases in amplitude. A similar trend for the cases with varied spanwise wavelength can also be found. It is also found that the streamwise vortices are generated more readily via transverse flow around the crest near the separation and reattachment points when the ratio of spanwise- to streamwise-wavelength equals 1.
Both patient composition and medical care received in clinical trials may not be representative of clinical practice, yet health technology assessments (HTAs) commonly use extrapolation results from trials to estimate incremental benefit. Due to data limitations, external validation of trial extrapolations are uncommon. With the goal of better estimating the benefit of new therapies in practice, we compared long-term survival estimated from real-world patients who received therapy similar to the comparator arm of the OAK trial, a phase III study of patients with advanced non-small cell lung cancer (aNSCLC) who progressed following initial chemotherapy, to standard estimation approaches.
Methods
We estimated long-term survival from: (i) direct extrapolation of trial survival curves; and (ii) aNSCLC patients from the United States Flatiron Health Electronic Health Record ()-derived de-identified database diagnosed between January 2011 and August 2019 who received docetaxel monotherapy after platinum-doublet and had adequate organ function as well as functional status. Patients with unknown organ function and functional status were also included. Standard parametric extrapolations were applied and selected based on visual inspection and goodness-of-fit tests for each cohort.
Results
Using a log-logistic model to extrapolate the trial comparator arm (N = 425), estimated lifetime mean overall survival was 19.2 months (95% confidence interval [95% CI]: 16.5–22.6), and 14.4 months (95% CI: 12.4–17.0) for the real-world cohort (N = 415). Estimated 5-year overall survival rates were 5.4 percent (95% CI: 3.9–7.3) for the trial patients, compared to 3.7 percent (95% CI: 2.6–5.0) among real-world cohort patients.
Conclusions
Our results suggest that directly extrapolating observed survival for trial patients may overestimate the long-term survival compared to the experience of patients treated in routine practice. Our findings have implications for those wishing to estimate the incremental benefit for novel versus established treatments. We plan to compare our results to a generic patient cohort from national cancer registry. Further EHR-based studies utilizing real world data are needed to confirm our findings and to extend beyond this use case for other cancer types and anti-neoplastic therapies.
Structural hierarchy is ubiquitous in nature and quite important for optimizing the properties of functional materials. Carbon nanomaterials, owing to their unique and tunable physical and chemical properties, have been regarded as promising candidates for various energy storage systems. Constructing hierarchically structured carbon nanomaterials (HSCNs) can boost electrochemical performance of nanocarbons. Therefore, HSCNs have attracted tremendous research attentions in recent years. In this review, we summarized the recent progress in hierarchical structure design of carbon nanomaterials and their potential applications in different energy storage technologies. First we give a brief introduction about carbon nanomaterials and the hierarchical structure merits. Subsequently, recent research works on hierarchical structure design of carbon nanomaterials was summarized and classified according to applications in lithium-ion batteries, sodium-ion batteries, supercapacitors and lithium–sulfur batteries, respectively. In addition, the challenges of HSCNs in different applications were also concluded and reviewed. At last, design principles of HSCNs were summarized and future development trends were prospected.
The shear-band propagation in bulk metallic glasses (BMGs) during deformation plays a key role in determining their macroscopic ductility. In this work, the shear band propagation during plastic deformation was investigated in the Cu46Zr46Al8 BMG and its in situ or ex situ prepared BMG composites. Compared with the brittle BMG, both types of ductile BMG composites show a more stable shear banding behavior as revealed by a larger power-law scaling exponent obtained from statistical analysis of serrations recorded in compressive curves. A higher cut-off elastic energy density (δc) linked with the multiplication of shear bands is observed for the in situ prepared BMG composites. However, the ex situ fabricated BMG composites show an almost equivalent or slightly larger δc since the dominant shear band but not multiple shear bands mainly governs their deformation. Such observations imply that the shear banding stability of BMGs during deformation is enhanced not only by inducing multiple shear bands but also by obstructing the movement of the dominant shear band at its driven path.
We present calculation of critical voltage for AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layer. The calculation includes mechanical stress and relaxable energy in the GaN/AlGaN barrier layer. Under high voltage conditions, the high electric field results in an increase in stored relaxable energy. If this exceeds a critical value, crystallographic defects are formed. This degradation mechanism is voltage driven and characterized by a critical voltage beyond which non-reversible degradation takes place. The dependence of the GaN cap layer’s thickness on the critical voltage has been discussed. The calculated results indicate that thicker GaN cap layer results in higher critical voltage.
The properties of a series of phase measurement techniques, including interferometry, the Hartmann–Shack wavefront sensor, the knife-edge technique, and coherent diffraction imaging, are summarized and their performance in high power laser applications is compared. The advantages, disadvantages, and application ranges of each technique are discussed.
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper. The calculations were made using a self-consistent solution of the Schrödinger-Poisson equations and an AlGaN/GaN HEMTs numerical device model. Transconductance characteristics of the devices are discussed while the thickness and Al composition of the graded AlGaN layer are optimized. It is found that graded AlGaN layer structure can tailor device’s gm − Vgs profile by improving polar optical phonon mobility and interface roughness mobility. Good agreement is obtained between the theoretical calculations and experimental measurements over the full range of applied gate bias.
The AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) sample has been grown by MOCVD on (0 0 0 1) sapphire substrate. The structure features a 7 nm In0.046Ga0.954N interlayer determined by Rutherford backscattering (RBS). Since the polarization field in the InGaN interlayer is opposite to it in the AlGaN layer, an additional potential barrier is introduced between the two-dimensional electron gas (2DEG) channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. The GaN layers between the AlGaN layer and InGaN interlayer are divided into two layers consisting of GaN channel layer which provides high mobility 2DEG grown at 1070 °C and GaN spacer layer grown at the same temperature as InGaN interlayer (800 °C) to prevent indium diffusion. RBS measurement confirms that the 3 nm GaN spacer layer isolates the InGaN interlayer well and free from diffusion. Hall measurement has been performed, the mobility as high as 1552 cm2/V s at room temperature is obtained and the sheet carrier density is 1.55 × 1013 cm−2. The average sheet resistance is 331 Ω/sq, respectively. The mobility obtained in this paper is about 20% higher than similar structures reported.
We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 mΩ cm2, whereas the breakdown voltage and specific on-resistance of SG-HEMTs were 740 V and 4.4 mΩ cm2, respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed measurements and possessed faster switch speed than Si MOSFET. We demonstrate that AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high power switching applications.
Dielectric barrier discharge plasma sources have been studied and used for syntheses of diamond like carbon thin films. The plasma electrical properties under different gases concentrations and pressures were diagnosed. Based on the results of characterizations, dielectric barrier discharge plasma at different methane-hydrogen-argon gas ratios was used to synthesize large area of diamond like carbon films. Experimental data indicate that only at argon concentration equal to or less than 75% diamond like carbon film fabrication could be accomplished, which has been confirmed based on the Raman spectra and their hardness measurements, whereas high argon content during deposition would result in graphite type of thin films.
Recommend this
Email your librarian or administrator to recommend adding this to your organisation's collection.