Ca0.98Eu0.02Al1−4δ/3Si1+δN3 (δ = 0–0.36) red-emitting phosphors were prepared by carbothermal reduction and nitridation method with stable and inexpensive CaCO3 as Ca source. Optimal nominal composition was obtained at δ = 0.18, showing intense emission peaked at 625 nm and high external quantum efficiency of 71%. The emission wave length could be successfully tuned from 630 to 606 nm with increasing δ value. Ca0.98Eu0.02Al1−4δ/3Si1+δN3 phosphors provided two coordinated environments for Eu2+ ions, resulting in two fitted Gaussian peaks. Energy transfer from Eu2+ sites in Si-rich environments to those in Si/Al-equivalent modes has been confirmed by analysis of the decay curve of each peak. The decay behaviors suggested that energy transfer effect slowed with higher δ value. Finally, warm white light was created by combining as-prepared red-emitting Ca0.98Eu0.02Al0.76Si1.18N3 and yellow-emitting YAG:Ce3+ phosphors with a blue-emitting chip, exhibiting a color rendering index R a of 91 at a low correlated color temperature of 3500 K with a luminous efficiency of 79 lm/W.

In this work, the relationship between the substrate crystallinity and the on-state resistances of silicon carbide (SiC) photoconductive semiconductor switches (PCSSs) was investigated. PCSSs with different channel lengths were fabricated on semi insulating 6H–SiC having different crystal qualities. A method was introduced for determining the photoconductive capacity of the SiC PCSSs. The experimental data suggest that the photoconductive capacity decreases sharply with the degradation of the full width at half maximum of the rocking curve of the 6H–SiC substrates. It is found that increasing the carrier mobility is a key factor for reducing the on-state resistance of the 6H–SiC PCSSs. Moreover, the results in this work present reference for the selection of 6H–SiC substrates for the fabrication of PCSSs and some other photoelectric devices.

Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.

This trial was aimed at investigating the effect of different doses of progesterone (P4) and types of vaginal bolts on new follicular wave induction, oestrus synchronization and superovulation in Holstein heifers. Results showed that the interval after prostaglandin F2α (PGF2α) application and oestrus occurrence between the sponge blot (SP) group (48.3 h) and the progestin release device (PRD) group (39 h) was significantly different (P<0.05). The average number of embryos obtained in the SP group (13.2) was significantly higher than that (8.7) in the PRD group (P<0.05). The same trend was observed for the number of usable embryos (5.7 and 3.3 for SP and PRD groups, respectively). The injection of 50 and 100 mg of P4 efficiently induced a new follicular wave, whereas no significant difference (P>0.05) was recorded on oestrus synchronization and superovulation between the two groups.