The fall armyworm (FAW) Spodoptera frugiperda (J.E. Smith) is a highly damaging invasive omnivorous pest that has developed varying degrees of resistance to commonly used insecticides. To investigate the molecular mechanisms of tolerance to tetraniliprole, spinetoram, and emamectin benzoate, the enzyme activity, synergistic effect, and RNA interference were implemented in S. frugiperda. The functions of cytochrome P450 monooxygenase (P450) in the tolerance to tetraniliprole, spinetoram, and emamectin benzoate in S. frugiperda was determined by analysing changes in detoxification metabolic enzyme activity and the effects of enzyme inhibitors on susceptibility to the three insecticides. 102 P450 genes were screened via transcriptome and genome, of which 67 P450 genes were differentially expressed in response to tetraniliprole, spinetoram, and emamectin benzoate and validated by quantitative real-time PCR. The expression patterns of CYP9A75, CYP340AA4, CYP340AX8v2, CYP340L16, CYP341B15v2, and CYP341B17v2 were analysed in different tissues and at different developmental stages in S. frugiperda. Silencing CYP340L16 significantly increased the susceptibility of S. frugiperda to tetraniliprole, spinetoram, and emamectin benzoate. Furthermore, knockdown of CYP340AX8v2, CYP9A75, and CYP341B17v2 significantly increased the sensitivity of S. frugiperda to tetraniliprole. Knockdown of CYP340AX8v2 and CYP340AA4 significantly increased mortality of S. frugiperda to spinetoram. Knockdown of CYP9A75 and CYP341B15v2 significantly increased the susceptibility of S. frugiperda to emamectin benzoate. These results may help to elucidate the mechanisms of tolerance to tetraniliprole, spinetoram and emamectin benzoate in S. frugiperda.

LAMOST has obtained a large number of spectra for K-giant stars whose metallicities are well measured and released in DR5. Combining with the distances, radial velocities and proper motions provided by Gaia DR2, the full position and velocity information has been obtained. Using the Bayesian method we have constrained the rotational velocity of the halo and thick disk components in the local volume within 4 kpc from the Sun. The values of the rotational velocity are and for the halo and disk respectively, with the velocity of LSR assumed to be 232 km s−1. The dispersions of the rotational velocity are and for the two components. What’s more, another hot retrogradely rotating component is discovered.

A major uncertainty in the determination of the mass profile of the Milky Way using stellar kinematics in the halo is the poorly determined anisotropy parameter, , where σr is the Galactocentric radial velocity dispersion, and σθ and σφ are the tangential components of the velocity dispersion. We have used a sample of over 24,000 Galactic halo K giant and blue horizontal branch stars from the LAMOST stellar spectroscopic survey and SDSS/SEGUE, combined with proper motions from Gaia Data Release 2, to measure β(rgc) over a wide range of Galactocentric distances rgc from 5 to 80 kpc. Kinematic substructures have been carefully removed to reveal the underlying diffuse stellar halo prior to measuring β. We find that orbits are generally radial (β > 0) and β is constant out to distances of about 40 kpc, with a dependence on metallicity of the stars, such that β declines with lower metallicity. Similar behavior is seen in both the K giant and BHB samples.

Reports arose from major Chinese wheat production regions that flixweed was not controlled by tribenuron after the herbicide was continuously used for several years. Flixweed seeds were collected from wheat fields that had been treated with tribenuron repeatedly over 3 to 15 yr or from road sides and remote hills that had never received tribenuron in Jiangsu, Hebei, Shanxi, Sichuan, Shandong, Shaanxi, and Henan provinces, and Tianjin and Beijing metropolises in China. The response of various biotypes to tribenuron was determined by whole plant experiments in the greenhouse. The experiments demonstrated that 11 of 32 flixweed biotypes were susceptible to tribenuron. The remaining 21 biotypes expressed moderate to high levels of tribenuron resistance with resistance indices ranging from 4 to > 1,500. DNA sequence analysis of acetolactate synthase (ALS) genes of selected biotypes 6, 7, 27, and 29 revealed a point mutation at position 197 of the ALS gene, as numbered relative to the protein sequence of Arabidopsis, where proline was substituted by leucine in biotype 7 and by threonine in biotype 29. These mutations are known to confer resistance to ALS-inhibiting herbicides and are responsible for the high resistance of these biotypes to tribenuron. The results also indicate that tribenuron resistance in flixweed is widespread in China and management programs to control these resistant populations are warranted.

We propose a Bayesian method to measure the total Galactic extinction parameters, RV and AV. Validation tests based on the simulated data indicate that the method can achieve the accuracy of around 0.01 mag. We apply this method to the SDSS BHB stars in the northern Galactic cap and find that the derived extinctions are highly consistent with those from Schlegel et al. (1998). It suggests that the Bayesian method is promising for the extinction estimation, even the reddening values are close to the observational errors.

We estimate the 3D extinction law in the optical–NIR bands for a line of sight in the 2nd quadrant of the Galactic disk. Two dust lanes are identified at ~9 and ~10.25 kpc in both AV and RV, indicating that the size of the dust grains in the spiral arms is larger than that in the inter-arm regions.

A support vector machine (SVM) method is applied to select K giant stars directly from the spectral features of LAMOST spectra. The performance of the algorithm is assessed using the MILES library. It shows that the completeness of the K giant stars is 87% with only about 6% dwarf contamination. This allows us to select 18,013 K giant stars at |b|>20° and 38,108 at |b|<20° from LAMOST pilot survey data.

We use line-of-sight velocities of more than 4000 red clump stars observed from MMT/Hectospec to derive the Galactic rotation curve between 8 and 13 kpc in Galactocentric radius to better than 10 km s−1. A three-component (bulge+disk+halo) with an additional massive ring of 1.66×1010 M⊙ at about 11.6 kpc provides an excellent fit with the observation.

In this work, the relationship between the substrate crystallinity and the on-state resistances of silicon carbide (SiC) photoconductive semiconductor switches (PCSSs) was investigated. PCSSs with different channel lengths were fabricated on semi insulating 6H–SiC having different crystal qualities. A method was introduced for determining the photoconductive capacity of the SiC PCSSs. The experimental data suggest that the photoconductive capacity decreases sharply with the degradation of the full width at half maximum of the rocking curve of the 6H–SiC substrates. It is found that increasing the carrier mobility is a key factor for reducing the on-state resistance of the 6H–SiC PCSSs. Moreover, the results in this work present reference for the selection of 6H–SiC substrates for the fabrication of PCSSs and some other photoelectric devices.

Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.

High quality strained Ge (s-Ge) epitaxial layers are a promising candidate to achieve high mobility channel MOSFETs suitable for the 22 nm technology node and beyond, due to the intrinsically higher mobility of Ge compared to Si, and the additional performance enhancements from strain [1]. In order to achieve an s-Ge channel more than a few monolayers thick it is necessary to engineer a relaxed Si1-xGex buffer with a high Ge content (x > 0.5). We have recently reported high quality s-Ge layers grown by RP-CVD at low temperature (T ≤ 450 °C), on a fully relaxed Si0.2Ge0.8 buffer [2]. By using a reverse-grading approach, we achieved a high Ge composition in the buffer, with a smooth surface (rms surface roughness of ~2 nm), low threading dislocations density (~ 4 x 106 cm-2) and much thinner (~ 2.1 μm) than can be achieved with conventional linear grading [3].

In this work, the thermal stability of s-Ge epilayers (up to 80 nm thick) grown on relaxed Si0.2Ge0.8 buffers has been investigated by in-situ annealing in H2 ambient at temperatures up to 650 °C. These temperatures are similar to those currently used during fabrication of advanced CMOS devices. All s-Ge layers were grown at 400 °C using GeH4 gaseous precursor. The relaxation of the annealed layers has been studied using high-resolution XRD reciprocal space maps (RSMs), and was found to depend strongly on both annealing temperature and thickness of the Ge epilayer. Strained Ge layers up to 50 nm thick remained fully strained after annealing at 450 °C, whereas after annealing at 550 °C s-Ge layers thicker than 20 nm were on the onset of relaxation; after annealing at 650 °C all s-Ge layers showed significant relaxation with defects clearly visible at the Si0.2Ge0.8/Ge interface. All annealed s-Ge layers exhibited higher surface roughness than s-Ge control samples without annealing (rms ~ 2 nm). Annealing at 450 °C resulted in only a slight increase in surface roughness (rms ~ 3 nm), almost independent of s-Ge thickness. However, annealing at 550 °C and 650 °C resulted in significant surface roughening (with maximum rms values of 5 nm and 35 nm, respectively) due to the formation of Ge islands, which were observed by AFM. At these higher temperatures, the surface roughness of the s-Ge layers was found to be thickness dependent, with a Ge smoothing effect observed for layers greater than 50 nm.

These results are particularly important for the fabrication of s-Ge MOSFETs, for which the surface passivation prior to gate stack formation is critical to the performance of the device. Based on the results presented here, the thermal budget should be kept below 550 °C to avoid relaxation and roughening of the s-Ge epilayer, which could degrade the device performance.

Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

To identify the disease-causing gene for a large multi-generational Chinese family affected by familial hypertrophic cardiomyopathy (FHCM), genome-wide screening was carried out in a Chinese family with FHCM using micro-satellite markers, and linkage analysis was performed using the MLINK program. The disease locus was mapped to 1q32 in this family. Screening for a mutation in the cardiac troponin T (cTnT) gene was performed by a PCR and sequencing was done with an ABI Prism 3700 sequencer. A novel C→G transition located in the ninth exon of the cTnT gene, leading to a predicted amino acid residue change from Ile to Met at codon 90, was identified in all individuals with hypertrophic cardiomyopathy (HCM). The results presented here strongly suggest that Ile90Met, a novel mutation in the cTnT gene, is causative agent of HCM in this family.