To date graphene and graphene-derived materials have created an immense research interests due to its extraordinary physical, chemical, and physiochemical properties, which delineated graphene as an outstanding material for future electronics, optics, and energy-harvesting devices. Typically, graphene has high mobility and optical transparency along with excellent mechanical properties and chemical inertness. Single-layer graphene exhibits ultrahigh optical transmissivity (∼98%), which allows passing through wide range of light wave lengths, thus designated as an ever-reported material for an optically conducting window. Furthermore, graphene's optical, electrical, and electrocatalytic properties can be tuned by applying different chemical functionalization protocols, which make it one of the most suitable candidates for advanced applications in optoelectronic and energy-harvesting devices. This review is intended to summarize the most important experimental results from the recent publications concerning the fascinating properties of graphene electrodes and their applications in various types of solar cells. Furthermore, the state of the art of different graphene synthesis processes and functionalization for the applications in solar cells are also discussed in this review.

The effects of polymer substrates on the interfacial structure and the thermal stability of Ga-doped ZnO (GZO) thin films were investigated. The GZO thin films were deposited on polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) substrates by rf-magnetron sputtering at room temperature, and thermal stability tests of the GZO thin films on the polymer substrates were performed at 150°C up to 8 h in air. Electrical and structural characterizations of the GZO thin films on the PET and the PEN substrates were carried out, and the origins of the stable interfacial structure and the improved thermal stability of the GZO thin film on the PEN substrate were discussed.

We introduce a simple preparation method for ultrathin carbon support films that is especially useful for high-resolution electron microscopy (HREM) of nanoparticles. Oxidized iron nanoparticles were used as a test sample in a demonstration of this method. The film qualities are discussed on the basis of electron-energy-loss spectroscopy (EELS) and image analysis techniques such as thickness maps and histograms. We carried out a comparison between the homemade and commercial film qualities. The relative thickness of the homemade support films was 0.6 times less than that of the commercial films, which was calculated from the EELS analysis, whereas the thicknesses of both carbon support films varied within about 3%. The percentage of the observable area was about 67 ± 7.6% of the support film. This was about twice as large as the commercial film (32 ± 9.3%). The HREM image of the sample prepared with our support film improved 9% in brightness and 15% in contrast compared with images obtained with the commercial support.

The BMIM+NO3-/Ag metal nanocomposite membranes were utilized for separation of propylene/propane mixtures. The selectivity of propylene/propane and the mixed gas permeance increased to 10 and 1.3 GPU, respectively. It is anticipated that the interactions between NO3- of BMIM+NO3- and the surface of silver nanoparticles causes the Ag surface to be partially positively charged, resulting in the reversible complexation with propylene and consequently facilitated propylene transport. The surface positive charge was confirmed from the increase in the binding energy of the d5/2 orbital of the silver nanoparticles by x-ray photoelectron spectroscopy. It increased from 368.26 for the neat silver nanoparticles to 368.47 eV for BMIM+NO3-/Ag metal composite. The positively charged surface of silver nanoparticles can be utilized as a new durable olefin carrier for facilitated transport.

In this study, we have investigated microencapsulation of magenta, yellow, and cyan color polymer balls with white pigment for multi-color electrophoretic display implementation. The charged color pigments have been prepared by physical coating of magenta, yellow, and cyan with functionalized polymers, then surface charging with charge control agent. These color balls with white pigment were microencapsulated in suspending fluid through in-situ polymerization.

We have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

The degradation behavior of integrated Pt/SrBi2Ta2O9/Pt capacitors caused by hydrogen impregnation during the spin-on glass (SOG)-based intermetal dielectric (IMD) process was investigated. SOG was tested as an IMD since it offers better planarity for multilevel metallization processes compared to other SiO2 deposition methods. It was found that the SOG itself does not degrade the ferroelectric performance. Deposition of an under-layer of SiOxNy by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 + N2O + N2 source gases and a SiO2?x capping layer by another PECVD process using SiH4 + N2O source gases produced hydrogen as a reaction by-product. The hydrogen diffused into the SBT layer and degraded the ferroelectric performance during subsequent annealing cycles. A very thin (10 nm) Al2O3 layer grown by atomic layer deposition before the IMD process successfully blocked the impregnation of the hydrogen. Therefore, excellent ferroelectric performance of the SBT capacitors were maintained after the multilevel metallization process as well as passivation. The adoption of SOG in the IMD process greatly improved the surface flatness of the wafer resulting in a higher capacitor yield with very good uniformity in ferroelectric properties over the 8-in.-diameter wafer.

Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.