A vertebrate burrow-bearing layer of late Pleistocene age is commonly found at many Paleolithic archaeological sites in Korea. The burrows are straight to slightly curved in horizontal (plan) view and gently inclined in lateral (sectional) view. They are interpreted as having been produced by rodent-like mammals based on their size and architecture. The significance of such burrow-bearing layers as a characteristic stratigraphic marker unit is demonstrated by high burrow abundance, consistent stratigraphic position, lack of stratigraphic recurrence at these sites, and widespread geographic extent. Three dating methods, tephrochronology, radiocarbon, and OSL dating, were used to infer the age of these burrow-bearing layers. The dating results indicate that they were formed between ca. 40,000 and 25,000 yr (MIS 3−2), and this suggests that this layer can be used as a stratigraphic time-marker in late Pleistocene paleosol sequences for this region.

To date graphene and graphene-derived materials have created an immense research interests due to its extraordinary physical, chemical, and physiochemical properties, which delineated graphene as an outstanding material for future electronics, optics, and energy-harvesting devices. Typically, graphene has high mobility and optical transparency along with excellent mechanical properties and chemical inertness. Single-layer graphene exhibits ultrahigh optical transmissivity (∼98%), which allows passing through wide range of light wave lengths, thus designated as an ever-reported material for an optically conducting window. Furthermore, graphene's optical, electrical, and electrocatalytic properties can be tuned by applying different chemical functionalization protocols, which make it one of the most suitable candidates for advanced applications in optoelectronic and energy-harvesting devices. This review is intended to summarize the most important experimental results from the recent publications concerning the fascinating properties of graphene electrodes and their applications in various types of solar cells. Furthermore, the state of the art of different graphene synthesis processes and functionalization for the applications in solar cells are also discussed in this review.

The effects of polymer substrates on the interfacial structure and the thermal stability of Ga-doped ZnO (GZO) thin films were investigated. The GZO thin films were deposited on polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) substrates by rf-magnetron sputtering at room temperature, and thermal stability tests of the GZO thin films on the polymer substrates were performed at 150°C up to 8 h in air. Electrical and structural characterizations of the GZO thin films on the PET and the PEN substrates were carried out, and the origins of the stable interfacial structure and the improved thermal stability of the GZO thin film on the PEN substrate were discussed.

We studied 52 children in order to assess the prevalence, natural history, and electrophysiologic effects of cardiac rhabdomyoma in tuberous sclerosis. Their ages ranged from one day to 12 years (median age 1.33 year). The tumors in the heart were found in 22 patients through cross-sectional echocardiography. The overall prevalence of cardiac rhabdomyoma was 42%. The prevalence of cardiac tumors in patients first seen in infancy was 77%, and that in patients over one year of age was 31%. Those with cardiac tumors diagnosed in infancy had more tumors per person than did the patients diagnosed after infancy, and the tumors were smaller in the patients diagnosed over one year of age. Follow-up cross-sectional echocardiography showed that almost all tumors showed spontaneous regression. Complete regression occurred more commonly in younger patients, and in those with smaller tumors. About 70% of patients with cardiac tumors had either normal findings or infrequent premature contractions on 24hour Holter monitorings. The rest of the patients with cardiac tumors showed either frequent premature contractions, atrioventricular block, or atrial tachycardia, but antiarrhythmic medication was rarely required. Cross-sectional echocardiography, therefore, seems to be the best diagnostic tool for screening cardiac rhabdomyomas in patients with tuberous sclerosis. The tumors may be managed more conservatively in view of their high rate of spontaneous regression and rather rare association with symptomatic arrhythmias.

Planarization characteristics of ultra low diluted Ceria (CeO2) based slurry, especially a multi-layered Chemical Mechanical Polishing (CMP) process, have been studied. The multi-layer represents the polished film consists of more than two different materials, so that, more than two different materials are exposed to the polished surface. In this work, ultra low diluted ceria based slurry was introduced to minimize micro-dishing effect of the process such as a storage node contact and a bit line contact in 80nm feature sized DRAM device, which has multi-layer film surfaces. As a result, we can minimize micro dishing of silicon dioxide and polycrystalline silicon at memory cell area, and silicon dioxide dishing at peripheral area.

Silicon carbide (SiC) microtubes were synthesized and characterized via a vapor–solid (VS) reaction of carbon fiber (Csolid) and SiO(gas). The synthesis mechanisms were investigated. The precursor led complete conversion of [SiO(gas) + C(solid)] into [SiC(solid) + CO(gas)] through overall reaction under inert gas flow at and above 1350 °C. Carbon fibers with small surface area (0.7–2.0 m2 g−1) were gradually converted to SiC microtubes with large specific surface area (45–63 m2 g−1). Inner surface of SiC microtubes indicated a villus-like morphology, which consisted of submicron-sized SiC villi. The outer surface of the SiC microtubes was smooth. Inner surface morphology of SiC microtubes was dependent upon synthesizing temperature. Thickness of villus-like layer in SiC microtubes increased with increasing synthesizing temperature, showing 0.25 and 0.5 at 1350 and 1400 °C, respectively. Both VS and gas–liquid–solid (VLS) growth mechanisms were investigated in synthesis of SiC fiber as a reaction byproduct, and the reaction was governed by both growth mechanisms.

The structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

In the scribe lane, which is located at the frame neighboring two chips, most of the test patterns for monitoring electrical characteristics of memory device as well as various key patterns for photo process are formed. The pattern density of these regions is lower than that of the main chip area, and cause nitride erosion by dishing phenomena during HSS STI CMP process. Nitride erosion occurred in the scribe lane region, could the affect erosion properties of cell region in main chip area, results in within die remain nitride variation and marginal fail in device operation. In this work, in order to prevent these problems, pattern design in the scribe lane was modified so as not to occurs within die remain nitride variation. The effects of improvement in within die remain nitride variation were investigated by FIB-TEM analysis and its correlation with electrical properties were explained.

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

A stress-driven formation of self-assembled InGaAs islands has been studied by the growth on GaAs (100) substrates with sub-micron platinum stripe pattern. Islands or quantum dots preferentially nucleate at the boundary of metal patterns. In addition, a quantum dot-free region near the boundary of the metal pattern is found. Those results are attributed to the stress between metal stripe and GaAs surface, which produces a laterally stressed region around the metal stripe. Adatoms on this region preferentially migrate toward the edge of metal stripes with maximum stress. This result may show a possible way for the interconnection between randomly distributed self-assembled quantum dots and metal stripes.

Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Pt/RuO2 double electrode was successfully prepared by using a new alkoxide-alkanolamine, sol-gel method. It was observed that the use of Pt/RuO2 double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and no degradation in polarization was observed up to 1011 cycles.