In this study, a new method to achieve real information recording with a density of 1 Tbit/inch2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction of nano domains. Local domain switching was carried out by applying a voltage pulse. A series of test writes revealed that the bit size varied according to the polarization direction of the bits in the immediate environment. Therefore, in order to keep the bit size constant (at 25.6 nm), the pulse amplitude required to create each individual bit was calculated as a function of the polarities of the surrounding data bits. As a result, real information storage at a density of 1 Tbit/inch2 was successfully achieved, with a low bit error rate of 1.8 × 10-2.