A CoCrFeNiMn high-entropy alloy (HEA), in the form of a face-centered cubic (fcc) solid solution, was processed by high-pressure torsion (HPT) to produce a nanocrystalline (nc) HEA. Significant grain refinement was achieved from the very early stage of HPT through 1/4 turn and an nc structure with an average grain size of ∼40 nm was successfully attained after 2 turns. The feasibility of significant microstructural changes was attributed to the occurrence of accelerated atomic diffusivity under the torsional stress during HPT. Nanoindentation experiments showed that the hardness increased significantly in the nc HEA during HPT processing and this was associated with additional grain refinement. The estimated values of the strain-rate sensitivity were maintained reasonably constant from the as-cast condition to the nc alloy after HPT through 2 turns, thereby demonstrating a preservation of plasticity in the HEA. In addition, a calculation of the activation volume suggested that the grain boundaries play an important role in the plastic deformation of the nc HEA where the flow mechanism is consistent with other nc metals. Transmission electron microscopy showed that, unlike conventional fcc nc metals, the nc HEA exhibits excellent microstructural stability under severe stress conditions.

The objective of the present study was to determine whether angiotensinogen G(–6)A polymorphism is associated with the elevation of blood pressure (BP) in the hypertensive disorders of pregnancy in Korean population. The subjects included 201 cases with the hypertensive disorders of pregnancy and 160 healthy controls. The medical records of subjects were reviewed. Cases were classified into the four subtypes (transient hypertension, preeclampsia, chronic hypertension, and preeclampsia superimposed on chronic hypertension) by the diagnostic criteria suggested by the National High Blood Pressure Education Program Working Group. Cases were also divided into the high and low BP group by the elevation of BP (diastolic BP greater than or equal to 110 mmHg). Maternal angiotensinogen G(–6)A polymorphism was determined by restriction fragment length polymorphism. Frequencies of AA genotype were significantly higher in the high than in the low BP group in the preeclampsia, superimposed preeclampsia, and the combined group (N = 201), suggesting that the angiotensinogen G(–6)A allele was significantly associated with the elevation of BP in the hypertensive disorders of pregnancy among South Korean women. The present findings imply that the elevation of BP can serve as an endophenotype for a spectrum of hypertensive conditions in pregnancy.

This study aimed to investigate whether aquaporin 3 (Aqp3) mRNAs are expressed in immature oocytes and altered during in vitro maturation process. Five- to 6-week-old female ICR mice were primed by gonadotropin for 24 and 48 h. Immature oocytes obtained 48 h after priming were also matured in vitro for 17 to 18 h. In vivo matured oocytes were obtained after 48 h priming followed by hCG injection. Total RNAs were extracted from 80 to 150 oocytes in each experimental group, and the levels of Aqp3 mRNA were quantified by real-time reverse transcriptase polymerase chain reaction. The experiments were repeated twice using different oocytes. The Aqp3 mRNA was expressed in immature oocytes, as well as in in vitro and in vivo matured oocytes. The expression level was higher in immature oocytes obtained 48 h after priming (17.2 ± 8.6, mean ± SD) than those with no priming (5.7 ± 0.8) or obtained 24 h after priming (2.5 ± 0.8). The expression of Aqp3 mRNA decreased after in vitro maturation (1.2 ± 0.5), which was similar to in vivo matured oocytes (1.0 ± 0.0). Our work demonstrated that Aqp3 mRNA expression increased during the development of immature oocyte but decreased after completion of in vitro maturation. The results indicate that AQP3 is certainly needed for the acquisition of immature oocytes’ full growing potential within antral follicles.

MgO thin films are widely used in plasma display panels (PDPs) to protect the dielectric layer, which is composed of PbO2, B2O3, and SiO2 compound, against ion bombardment during discharge. To improve the electrical properties of the MgO thin films, (Ba,Sr,Ca)CO3 or LaB6, which has a lower work function than that of MgO, added to the MgO films. The effects of (Ba,Sr,Ca)CO3 or LaB6 addition on the electrical properties, microstructure, and electronic band structure were investigated. In the case where (Ba,Sr,Ca)CO3 was added, the firing voltage, which is the voltage when the panel is ignited the first time during increasing input voltage, was about 18.4 V lower than that of the conventional MgO films. In the case where LaB6 was added, the firing voltage was also reduced by about 24 V. The luminance and luminous efficiency were also increased. Of particular interest was the valence band spectra changed after adding (Ba,Sr,Ca)CO3 or LaB6. The valence band edge, which is the top of the valence band, was shifted to lower binding states and the width of the valence band was increased. Moreover, the band gap was slightly reduced. Considering the emission mechanism of MgO films in plasma display panels, these results mean that the secondary electrons can be ejected more easily and the ejected electrons have more energy. Therefore, the addition of (Ba,Sr,Ca)CO3 or LaB6 might improve the electrical properties.

A series of magnetic FeCoNiAl nanocapsules was synthesized by the plasma arc discharge method; the targets of Fe, Co, Ni, and Al powders were changed with varying compositions. The compositions of the nanocapsules were found to be quite different from those of the corresponding targets; the relative amount of Al (or Ni, Co) to Fe was increased (or decreased). Structures, particles sizes, composition, surface composition, magnetic properties, and thermal stability of the nanocapsules were investigated. The saturation magnetization Ms = 106.8 emu/g and coercive force iHc = 367 Oe were achieved for the nanocapsules with the Fe62.5Co21Ni13Al2.5 target. In the FeCoNiAl nanocapsules, the binding energies of Fe, Co, and Ni were different from those of the metals Fe, Co, and Ni. The binding energies of Fe2p3/2 and Fe2p1/2 of the nanocapsules were 708.2 and 721.3 eV, respectively. The four-layer structure was proposed to give a clear statement of how the composition and phase varied radially in the nanocapsules. The major contents of the four layers—i.e., the outer shell, the inner shell, the outer core and the inner core—were amorphous alumina, crystalline alumina, transition metal oxides, and transition metal alloy, respectively. The compositions, structures, particle size, and grain size of the nanocapsules all affect their magnetic properties. In the FeCoNiAl nanocapsules, the greater th amount of the body-centered-cubic phase, the stronger the ferromagnetic magnetic properties.

Metal-insulator-metal (MIM) capacitors were fabricated in a coplanar waveguide type using the Al2O3 thin film. The Al2O3 film was grown by atomic layer deposition(ALD) using Methyl-Pyrolidine-Tri-Methyl-Aluminum (MPTMA) and H2O on Ti. The capacitance per unit area of the fabricated MIM capacitor was 0.229 μF/cm2. And it had lower voltage coefficient of capacitance (VCC) and lower leakage current than that of Al2O3 MIM capacitor prepared by Al oxidation and Si3N4 MIM capacitor prepared by PECVD respectively. The fabricated Al2O3 MIM capacitors prepared by ALD exhibited low VCC, low leakage current, small frequency-dependent capacitance reduction, low temperature coefficient of capacitance (TCC) and good reliability. The characteristics of the device were suitable for RF ICs and DRAM.

Because of its superior cold formability, a great amount of IF steels is being produced by many steel manufacturers. Accordingly, numerous efforts have been made to understand the mechanism of improved plastic strain ratio in Ti-added IF steels1“3. Several mechanisms have been proposed to explain the effect of Ti on the deep drawability of these steels: l)the scavenging effect that is removing carbon and nitrogen from the solution by fixing them as stable precipitates, 2)promotion of (111) texture by fine dispersion of TiC precipitates, and 3)effects of substitutional elements in solid solution4. in spite of these advantages, Ti-added ultra low carbon steels have a disadvantage of high recrystallization temperature. Hayakawa et al.5have reported that recrystallization temperature is sharply rises with the increase in titanium content and reaches a peak when solute titanium is nil, and the acute recrystallization temperature is lowered with the decrease in amount of fine TiC precipitates.

Thin film electrodes of the perovskite oxide (Ba,Sr)RuO3 (BSR) were deposited on 4 inch ptype Si wafers by metal organic chemical vapor deposition (MOCVD) for the practical (Ba,Sr)TiO3 (BST) capacitor application using a new single cocktail source. The source materials used for the MOCVD BSR process were Ba(METHD)2, Sr(METHD)2 and Ru(METHD)3 and these were dissolved in n-butyl acetate. The source-feeding rate was precisely controlled by liquid mass flow controllers (LMFC). As-deposited BSR films possessed a (110)-oriented structure, with good uniformity and adherence on bare Si wafer. The phase formation was strongly affected by the oxygen flow rate and the input source rate. As the oxygen flow rate increased, the Ru/(Ba+Sr) composition ratio in the film decreased, while the Ba/(Ba+Sr) ratio was almost independent of the oxygen flow rate. The dielectric constants of BST capacitors fabricated using these electrodes was greater than 500.

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

Monoclinic gallium oxide (β-Ga2O3) nanowires were catalytically synthesized by electric arc discharge of GaN powders mixed with a small amount (less than 5 %) of transition metals under a pressure of 500 Torr (80 %-Ar + 20 %-O2). Scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM) images showed that the average diameter of the wires were about 30 nm and their lengths were as long as up to one hundred micrometer, resulting in extremely large aspect ratio. Fourier diffractogram was indicative of single crystalline nature of the β-Ga2O3 wire. HRTEM image also showed β-Ga2O3 with twin defects at the center of the wire which might play as nucleation seeds. Both X-ray diffraction (XRD) patterns and FT-Raman spectra of the wires identified the observed nanowires as monoclinic crystalline gallium oxides.

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040°C. Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 x 1018 cm-3

Restless legs syndrome was observed in three patients receiving mianserin. The symptoms resolved when the treatment was discontinued or reduced.