Feasibility of multiwavelength Raman spectroscopy was studied as a potentialin-line monitoring technique for grain size distribution in channel poly-Si usedin three dimensional stacked NAND (3D NAND) Flash memory devices. Variouschannel poly-Si materials in 3D-NAND Flash memory devices, converted fromchemical vapor deposition (CVD) grown a-Si, were characterized usingnon-contact, multiwavelength Raman spectroscopy and high resolutioncross-sectional transmission electron microscopy (HRXTEM). The Ramancharacterization results were compared with HRXTEM images. The correlationbetween the grain size distribution characterized by multiwavelength Ramanspectroscopy and “on current” (ION) of 3D NANDFlash memory devices was investigated. Good correlation between these techniqueswas seen. Multiwavelength Raman spectroscopy is very promising as anon-destructive in-line monitoring technique for grain size distribution inchannel poly-Si used in 3D NAND Flash memory devices.

The objective of the present study was to determine whether angiotensinogen G(–6)A polymorphism is associated with the elevation of blood pressure (BP) in the hypertensive disorders of pregnancy in Korean population. The subjects included 201 cases with the hypertensive disorders of pregnancy and 160 healthy controls. The medical records of subjects were reviewed. Cases were classified into the four subtypes (transient hypertension, preeclampsia, chronic hypertension, and preeclampsia superimposed on chronic hypertension) by the diagnostic criteria suggested by the National High Blood Pressure Education Program Working Group. Cases were also divided into the high and low BP group by the elevation of BP (diastolic BP greater than or equal to 110 mmHg). Maternal angiotensinogen G(–6)A polymorphism was determined by restriction fragment length polymorphism. Frequencies of AA genotype were significantly higher in the high than in the low BP group in the preeclampsia, superimposed preeclampsia, and the combined group (N = 201), suggesting that the angiotensinogen G(–6)A allele was significantly associated with the elevation of BP in the hypertensive disorders of pregnancy among South Korean women. The present findings imply that the elevation of BP can serve as an endophenotype for a spectrum of hypertensive conditions in pregnancy.

Background: The influences of demographics, culture, language, and environmental changes on Mini-Mental State Examination (MMSE) scores are considerable.

Methods: Using a sample of 7452 healthy, community-dwelling elderly Koreans, aged 55 to 94 years, who participated in the four ongoing geriatric cohorts in Korea, we investigated demographic influences on MMSE scores and derived normative data for this population. Geropsychiatrists strictly excluded subjects with cognitive disorders according to the protocol of the Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet (CERAD-K) Clinical Assessment Battery (CERAD-K-C).

Results: Education (standardized β = 0.463), age (standardized β = −0.303), and gender (standardized β = −0.057) had significant effects on MMSE scores (p < 0.001). The score of MMSE increase 0.379 point per 1-year education, decrease 0.188 per 1-year older, and decrease 0.491 in women compared to men. Education explained 30.4% of the scores’ total variance, which was much larger than the variances explained by age (8.4%) or gender (0.3%). Accordingly, we present normative data for the MMSE stratified by education (0, 1–3, 4–6, 7–9, 10–12, and ≥ 13 years), age (60–69, 70–79, and 80–89 years), and gender.

Conclusions: We provide contemporary education-, age-, and gender-stratified norms for the MMSE, derived from a large, community-dwelling elderly Korean population sample, which could be useful in evaluating individual MMSE scores.

Both luminous efficiency and lifetime in blue fluorescence organic light emitting devices (OLEDs) have been improved by modified HTMs with higher LUMO energy levels. The LUMO energy levels of HTM were increased by modifying substituent in HTM molecules. Two HTMs containing ortho and meta biphenyl substituent and one HTM containing thiophene substituent were synthesized via palladium catalyzed amine coupling reactions to compare with a para biphenyl substituent HTM-1 as a standard molecule. According to TDDFT calculations, these three modified HTMs showed 0.05-0.15 eV higher LUMO energy levels compared to the para biphenyl substituent HTM-1. The luminous efficiency and the lifetime (LT90) of OLEDs using HTM-2 at 500 cd/m2 have been enhanced up to 20 % and 52 %, respectively, compared to the standard device using HTM-1.

This study aimed to investigate whether aquaporin 3 (Aqp3) mRNAs are expressed in immature oocytes and altered during in vitro maturation process. Five- to 6-week-old female ICR mice were primed by gonadotropin for 24 and 48 h. Immature oocytes obtained 48 h after priming were also matured in vitro for 17 to 18 h. In vivo matured oocytes were obtained after 48 h priming followed by hCG injection. Total RNAs were extracted from 80 to 150 oocytes in each experimental group, and the levels of Aqp3 mRNA were quantified by real-time reverse transcriptase polymerase chain reaction. The experiments were repeated twice using different oocytes. The Aqp3 mRNA was expressed in immature oocytes, as well as in in vitro and in vivo matured oocytes. The expression level was higher in immature oocytes obtained 48 h after priming (17.2 ± 8.6, mean ± SD) than those with no priming (5.7 ± 0.8) or obtained 24 h after priming (2.5 ± 0.8). The expression of Aqp3 mRNA decreased after in vitro maturation (1.2 ± 0.5), which was similar to in vivo matured oocytes (1.0 ± 0.0). Our work demonstrated that Aqp3 mRNA expression increased during the development of immature oocyte but decreased after completion of in vitro maturation. The results indicate that AQP3 is certainly needed for the acquisition of immature oocytes’ full growing potential within antral follicles.

The absence of a low dielectric constant layer at the barium strontium titanate (BST)/Pt interface and a decreased roughness are critical issues in the production of (Ba0.5Sr0.5)TiO3 thin films with high tunabilities and low losses. An improvement in dielectric properties was achieved by the insertion of seed layers at the BST/Pt interface by pulsed laser deposition. The higher tunability can be attributed to (100) texturing of the BST films, which is independent of grain size and grain morphologies, thus leading to a variation in seed layer thicknesses. The tunability and dielectric constant of 1600-Å-thick BST films showed a maximum of 53% and 720, respectively, at a seed layer thickness of 100 Å. Dielectric loss is dependent on the roughness of BST films and reached a minimum of 0.8% at a root mean square roughness of 28 Å. The maximum figures of merit, defined as the ratio of tunability to dielectric loss, of approximately 58 at 100 kHz and 198 kV/cm were obtained at a seed layer thickness of 70 Å. The optimized seed layer thickness for BST deposition onto Pt/Ti/SiO2/Si substrates plays an important role in maintaining the high tunabilities and low loss, which are suitable for microwave device applications.

The YSTAR program is a general sky survey looking for variability. The main equipments are three 0.5-m telescopes. These telescopes have fast F/2 optics covering nearly 3.5 square degree field onto a 2K CCD. They also have very fast slew capability, which exceeds 10 degrees per second. These two factors make them most suitable for rapid target acquisition and wide-field surveys of various kinds. Our primary objective is to identify and monitor variable stars down to 18th R-magnitude, and our observing mode allows the same data set to be also useful in identifying asteroids. Our first telescope has just begun regular automated operation, and the second telescope will be installed in South Africa within this year to provide coverage of the southern sky.

A systematic study of photoluminescence (PL) and time-resolved PL spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si doping concentration in the barriers has been carried out. As the Si doping concentration increases, the PL emission intensity was increased and the PL peak energy was blueshifted. The energy separation between the spontaneous emission (SPE) and stimulated emission (SE) peaks decrease with increasing Si doping concentration. We also observed that the slow decay time τ2 in the QWs decreases with increasing Si doping concentration, from ∼ 130 ns for [Si] = 2 × 1018 cm−3 to ∼ 30 ns for [Si] = 1 × 1019 cm−3. The PL emission peak shifts to lower energies with delay time after a pulsed excitation and this shift decreases with increasing Si doping concentration. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the SPE and SE peaks with increasing Si doping concentration are attributed to the screening of piezoelectric field by carriers originated from Si doped barriers.

In Korea Depleted Uranium(DU) is used in manufacturing a metallic nuclear fuel for the Korean Multi-Purpose Research Reactor(KMRR). In the manufacturing processes it produces DU chips and scraps as a waste material which composed of U-Ti, U-Zr, U-Mo and U-Si intermetallic compound. In this study Air Controlled Oxidizer(ACO) has been developed which facilitates DU to be converted into U308, the most stable form of uranium. Since DU chips oxidize rapidly and their heat of oxidation is very high(4.199kJ/g, U3O8), the inside temperature of the oxidizer is likely going up rapidly. Therefore the oxidizer must be able to be cooled properly or temperature increasement of the oxidizer must be under control. Kang et al.[1] reported for the oxidation of U-0.75wt%/o Ti chips in air that U308 was detected at the temperature above 350°C. And they[2] also reported that the maximum heat generation per unit time during oxidation was as follows:

where Q was the maximum heat generation per unit time

WDU was the weight of DU loaded in ACO

dw/dt was the reaction rate

Vair was the flow rate of input air

R was the universal gas constant

and T was the absolute temperature.

From eq.(1) the maximum heat generation per unit time during oxidation is only function of the weight of DU loaded in ACO and the oxidation rate which is dependent on the oxidation temperature or the flow rate of input air.

The ACO consists of an air flow meter, an air heater, an oxidation chamber with inner heater(capacity 7.5kW), an ash collection tank, a fly ash collector, a pressure gauge, a safety valve, and a soaking tank. The air flow meter is used to control the flow rate of input air below theoretical air requirement limit for the complete oxidation of DU. The inner heater is used to heat the inside of the oxidizer to an optimum oxidation temperature. The ash collection tank is used to collect uranium oxide powder after completion of oxidation. The fly ash collector is used both to collect flying ashes and to condense vaporized uranium oxide. Also, in ACO, DU chips are not ignited directly in order to prevent rapid temperature increasement. The oxidation environment only is achieved by heating the inside of oxidizer.

To find effect of the oxidation temperature on the temperature of the oxidation chamber during treatment of DU, we conduct the experiment by changing heating rates of inner heater, 3, 4, 5 and 6kW, respectively. We conduct experiments for 120 minute with 2/min input air. However, it turned out that the complete oxidation is reached within 60 minute. After complete oxidation the weight gains of the DU chips is from 4.5 to 5.0 wt0/o and the DU chips are pulverized and they are converted to U 08 and 979 Mat. Res. Soc. Symp. Proc. Vol. 506 1998 Materials Research Society During the oxidation, maximum temperature increases to 470, 497.5, 572.5 and 6771C for heating rates 3, 4, 5 and 6kW, respectively. As the temperatures of the oxidation chamber outside surface are not exceed 1501C, however, DU chips are treated safely. In each experiment, weight before and after oxidation, the oxide forms of the product and the maximum temperature in the oxidation chamber during oxidation are shown in table 1. The maximum temperature profiles of the chamber inside and surface for time and heating rates are shown in Fig. I and 2, respectively.

We have constructed an apparatus for in situ measurement of stress of the film prepared by sputtering using an optical non-contact displacement detector. A change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was 5.9 µV/Å and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about 100 Å, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.