Various psychosocial and psychological interventions have been developed to reduce schizophrenia relapse prevention. A better understanding of these active interventions is important for clinical practice and for meaningful allocation of resources. However, no bibliometric analysis of this area has been conducted. Studies were retrieved from the Web of Science Core Collection database. The publication outputs and cooperation of institutions were visualized with Origin 2021. Global cooperation was visualized using ArcGIS Pro3.0. VOSviewer was used to generate visualizations of network of authors and keywords. The number of annual publications generally showed a fluctuating upward trend over the past 20 years. Germany published the most relevant articles (361, 26.76%). The Technical University of Munich was the most productive institution (70, 9.86%). Leucht Stefan published the most articles (46, 6.48%) and had the highest number of citations (4,375 citations). Schizophrenia Research published the most studies (39, 5.49%). Keywords were roughly classified into three clusters: cognitive behavioral therapy (CBT), family interventions and family psychoeducation and other factors related to interventions. The findings provided the current status of research on psychosocial and psychological interventions for schizophrenia relapse prevention from a bibliometric perspective. Recent research has mainly focused on CBT, family interventions and family psychoeducation.

High-intensity vortex beams with tunable topological charges and low coherence are highly demanded in applications such as inertial confinement fusion (ICF) and optical communication. However, traditional optical vortices featuring nonuniform intensity distributions are dramatically restricted in application scenarios that require a high-intensity vortex beam owing to their ineffective amplification resulting from the intensity-dependent nonlinear effect. Here, a low-coherence perfect vortex beam (PVB) with a topological charge as high as 140 is realized based on the super-pixel wavefront-shaping technique. More importantly, a globally adaptive feedback algorithm (GAFA) is proposed to efficiently suppress the original intensity fluctuation and achieve a flat-top PVB with dramatically reduced beam speckle contrast. The GAFA-based flat-top PVB generation method can pave the way for high-intensity vortex beam generation, which is crucial for potential applications in ICF, laser processing, optical communication and optical trapping.

The statistical analysis of heating effect and the cross-correlation analysis of both electron temperature and loop voltage have been done during electron cyclotron resonance heating (ECRH). The behavior of runaway electrons in the flat-top phase during ECRH are analyzed using experimental data. It is shown that the runaway population is indeed suppressed or even quenched when the toroidal electric field ET is reduced below the threshold electric field Eth by high-power and long-duration ECRH. The physical mechanism of runaway suppression is explored by the resonant interaction between the electron cyclotron waves and the energetic runaway electrons.

Piezoelectric properties k33 and d33 of 0.67 Pb(Mg1/3Nb2/3)O3–0.33 PbTiO3 single crystals grown by a modified Bridgman method were measured in the temperature range of 20–150 °C. Recoverability of the properties after the samples were heated to 110 °C, above the ferroelectric–ferroelectric (F–F) phase transition temperature of the composition, was found. From 20 to approximately 80 °C, k33 increases slightly, while d33 is almost doubled. Between approximately 90 and 100 °C, k33 decreases sharply to roughly a level of PZT-5 ceramics and d33 decreases to about 700 pC/N. They increase again with further increase of temperature; at 140 °C they attain 0.74 and approximately 1300 pC/N, respectively, and then decrease quickly and approach zero at about 150 °C. When heating to 110 °C followed by cooling to room temperature, the property decay is small. After more than one dozen heating–cooling cycles, k33 and d33 tend to be stable at 0.89 and approximately 1220 pC/N, respectively. The results might be helpful for device design and applications of PMN–PT single crystals.

The piezoresistive properties of boron-doped PECVD microcrystalline Si films (μc-Si) deposited on SiO2 coated Si, covar or quartz substrates have been investigated. The relations between the gauge factor (G.F.) and doping concentrations as well as the film thickness etc. have been obtained experimentally. The maximum longitudinal G.F. of 25 and 20 are measured for Si and covar substrates respectively. An expression for calculating G.F. of P-type μc-Si is derived theoretically by use of the splitting model of heavy and light hole band at k=0 and the thermionic emission theory. The calculated dependences of G.F. on the doping concentrations, grain size and trap state density agree well with the experimental results, which offer a better understanding of the piezoresistive characteristics of μc-Si or poly-Si, and enable optimized design and fabrication of μc-Si or poly-Si strain gauges.