In this paper, we first introduce the concept of symmetric biderivation radicals and characteristic subalgebras of Lie algebras and study their properties. Based on these results, we precisely determine biderivations of some Lie algebras including finite-dimensional simple Lie algebras over arbitrary fields of characteristic not $2$ or $3$, and the Witt algebras $\mathcal {W}^+_n$ over fields of characteristic $0$. As an application, commutative post-Lie algebra structure on the aforementioned Lie algebras is shown to be trivial.

An optical spectrometer system based on 60 channels of fibers has been designed and employed to diagnose light emissions from laser–plasma interactions. The 60 fiber collectors cover an integrated solid angle of $\pi$, enabling the measurement of global energy losses in a symmetrical configuration. A detecting spectral range from ultraviolet to near-infrared, with angular distribution, allows for the understanding of the physical mechanisms involving various plasma modes. Experimental measurements of scattered lights from a conical implosion driven by high-energy nanosecond laser beams at the Shenguang-II Upgrade facility have been demonstrated, serving as reliable diagnostics to characterize laser absorption and energy losses from laser–plasma instabilities. This compact diagnostic system can provide comprehensive insights into laser energy coupling in direct-drive inertial confinement fusion research, which are essential for studying the driving asymmetry and improving the implosion efficiencies.

In this paper, we classify simple smooth modules over the mirror Heisenberg–Virasoro algebra ${\mathfrak {D}}$, and simple smooth modules over the twisted Heisenberg–Virasoro algebra $\bar {\mathfrak {D}}$ with non-zero level. To this end we generalize Sugawara operators to smooth modules over the Heisenberg algebra, and develop new techniques. As applications, we characterize simple Whittaker modules and simple highest weight modules over ${\mathfrak {D}}$. A vertex-algebraic interpretation of our result is the classification of simple weak twisted and untwisted modules over the Heisenberg–Virasoro vertex algebras. We also present a few examples of simple smooth ${\mathfrak {D}}$-modules and $\bar {\mathfrak {D}}$-modules induced from simple modules over finite dimensional solvable Lie algebras, that are not tensor product modules of Virasoro modules and Heisenberg modules. This is very different from the case of simple highest weight modules over $\mathfrak {D}$ and $\bar {\mathfrak {D}}$ which are always tensor products of simple Virasoro modules and simple Heisenberg modules.

A low-profile wideband circularly polarized (CP) metasurface antenna is demonstrated for C-band applications. The metasurface consists of 4 × 4 square patches with Z-shaped slots. Characteristic mode analysis is used to investigate the modal behavior of the metasurface, and a pair of degenerate modes is chosen as the operating modes. The CP radiation is realized by exciting a pair of degenerate modes of the metasurface through a slot antenna, which is used as a feed structure with a 90° phase difference. The CP bandwidth is further widened by combining the resonance modes of the metasurface and slot antenna. The measured results show that the −10 dB impedance bandwidth of the antenna is 3.47–4.76 GHz, and the 3 dB axial ratio bandwidth is 3.5–4.9 GHz with a peak gain of 6.9 dBic. Moreover, the antenna exhibits well left-hand CP radiation performances with a low profile of 0.046λ0.

Using crossed homomorphisms, we show that the category of weak representations (respectively admissible representations) of Lie–Rinehart algebras (respectively Leibniz pairs) is a left module category over the monoidal category of representations of Lie algebras. In particular, the corresponding bifunctor of monoidal categories is established to give new weak representations (respectively admissible representations) of Lie–Rinehart algebras (respectively Leibniz pairs). This generalises and unifies various existing constructions of representations of many Lie algebras by using this new bifunctor. We construct some crossed homomorphisms in different situations and use our actions of monoidal categories to recover some known constructions of representations of various Lie algebras and to obtain new representations for generalised Witt algebras and their Lie subalgebras. The cohomology theory of crossed homomorphisms between Lie algebras is introduced and used to study linear deformations of crossed homomorphisms.

Stable isotopic analysis of carbon and nitrogen in human and faunal remains has been widely used to reconstruct prehistoric diets and environmental changes. Isotopic analysis of plant remains allows for a more extensive consideration of paleodiets and can potentially provide information about the environment in which the crops were grown. This paper reports the results of δ13C and δ15N analyses performed on modern and charred archaeological foxtail millet samples collected from the western part of the Chinese Loess Plateau. The δ13C mean value of modern samples is lower than that of ancient samples. There is a significant difference between grain and leaf δ15N values. These results challenge the standard assumption in isotope studies that the nitrogen isotope signals of the different part of plants consumed by humans and animals are the same. The 3–5‰ difference between human and animal δ15N values is always regarded as an indicator of whether human diets contained considerable animal protein. The difference between grain and leaf δ15N values makes this assumption problematic in a foxtail millet-dominated society.

Cu2ZnSnSe4 (CZTSe) precursor films were deposited by one-step RF sputtering process at room temperature under various sputtering power, and then films were annealed at different pressure of 10-3 Pa and 100 Pa. Films annealed at high vacuum of 10-3 Pa exhibit significant loss of Sn element and they construct with two phases of Cu1.8Se and ZnSe. Higher annealing pressure at 100 Pa can drastically reduce the loss of Sn element and result in single kesterite CZTSe phase of the annealed films. Loss of Se element is found in all the annealed films and the values of [Se]/[Metal] and [Sn]/[Zn] are related with sputtering power. High vacuum annealed films show cracks and porous structure on the surface, meanwhile, films annealed at 100 Pa show compact, densely packed homogeneous morphology.

Quasicrystalline precipitates in ZrAlNiCuNb alloy were systematically studied by transmission electron microscopy. It was found that precipitates always contain various linear phason strains. By electron diffraction analysis, two types of linear phason strain with two different directions perpendicular to the incident beam described by strain matrices with only one nonzero element were identified. After measuring the deviations of diffraction spots and quantitatively fitting against their perpendicular components of the reciprocal lattice vectors, the phason strain matrices were obtained. Domain structures formed as a result of linear phason strain variants along directions with equal probability. Electron diffraction and high-resolution electron imaging provide supportive evidence of this result.

We report nonlinear optical investigation of green emission GaInN/GaN multi-quantum structures grown along c- and m-axes on sapphire and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong superluminescence near the lasing condition in c-plane grown quantum well structures with full width at half maximum of 6 nm. The superluminescence couples out of the edge of the sample in a mode pattern consistent with gain in a high mode of the waveguide. The wavelength of the superluminescence is 474 nm. The threshold intensity of superluminescence was found to be 156 kW/cm2. Increasing pump intensity leads to a strong photoluminescence blueshift as large as 380 meV in samples grown along the c-axis on sapphire substrate, while under the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less than 10 meV. The large emission blueshift is hereby attributed to the internal piezoelectric field in the c-axis grown structure. We observe a gain value of 20 cm-1 together with internal absorption losses of 2.3 – 6.0 cm-1 for the superluminescent samples.

In this study, we characterized the structural defects in blue and green GaInN/GaN LEDs grown on c-plane bulk GaN and sapphire substrates. Low density large V-defects with diameters around 600 nm were found in the blue LEDs on bulk GaN. They were initiated by edge-type threading dislocations (TDs) around the homoepitaxial growth interface. On the other hand, a high density 7×109 cm−2 of smaller V-defects with sidewalls on {1101} facets was observed in the active region of green LEDs on sapphire. Their diameter ranges from 150 to 200 nm. Misfit dislocations (MDs) generated in the quantum wells are found to initiate these V-defects. With optimizing the epitaxial growth conditions, the generation of MDs and their smaller V-defects was largely suppressed. As a result, the light output power improved by one order of magnitude. For green LEDs on bulk GaN, another unique type of defect was found in the active region: an inclined dislocation pair (IDP). In it a pair of dislocations propagate at a tilt angle of 18 to 23° from the [0001] growth direction towards <1100>. This defect seems to be a path of strain relief in the high indium composition quantum wells.

With an external laser excitation, the electroluminescence (EL) of GaInN/GaN green light emitting diodes (LEDs) grown on sapphire by metal organic vapor phase epitaxy has been investigated. The EL was found significantly enhanced under this bias and the difference can not merely be attributed to additional photoluminescence (PL). Under 325 nm photon bias, the EL enhancement starts at its highest value and decreases along with an increase of the LED current. Under 408 nm and 488 nm bias, it increases first to a value smaller than that of the 325 nm bias and then decreases with a much lower rate along the current increase. The EL enhancement is attributed to the more efficient carrier injection into quantum wells (QWs) resulting from the screening of the QW polarization by photon bias. Therefore, an enhanced balance of majority and minority carriers was obtained resulting in a better radiative recombination rate. Meanwhile, the current-voltage characteristics show a negative current first and then a voltage reduction as forward voltage increases. The reverse photocurrent indicates carrier loss due to the solar cell effect in our LED device while at high current region the carrier loss is attributed to another effect controlled by the external electrical field. At the balance point of those two effects, the EL enhancement is the highest. These findings clarify the transition from highly efficient radiative recombination at low current density to the region of efficiency droop at high current densities.

Experimental wet chemical approaches have been demonstrated in the synthesis of a new chainlike (C60-Fe-C60-Fe)n complex. This structure has been proposed based on 13C solid-state nuclear magnetic resonance, electron paramagnetic resonance, high-resolution transmission electron microscopy, energy-dispersive spectroscopy, and X-ray diffraction. Furthermore, this structure has been shown to have unique binding sites for dihydrogen molecules with the technique of temperature-programmed desorption. The new adsorption sites have binding energies that are stronger than that observed for hydrogen physisorbed on planar graphite, but significantly weaker than a chemical C-H bond. Volumetric measurements at 77 K and 2 bar show a hydrogen adsorption capacity of 0.5 wt%. Interestingly, the BET surface area is ∼31 m2/g after degassing, which is approximately an order of magnitude less than expected given the measured experimental hydrogen capacity. Nitrogen and hydrogen isotherms performed at 75 K also show a marked selectivity for hydrogen over nitrogen for this complex, indicating hidden surface area for hydrogen adsorption.

GaInN based light emitting diodes (LEDs) play an important role as energy efficient light sources in solid state lighting. A controversial discussion addresses the origin of lateral light emission variations and their correlation with either of the identified defects, e.g., threading dislocations and V-defects. In order to establish any possible correlation of defects and luminescence centers, we analyze three UV, blue and green LED dies by microscopic mapping of spectroscopic cathodoluminescence and secondary electrons at variable low temperature from 7 K to room temperature. Particular effort is being placed on a quantitative analysis of the luminescence signal. Image intensities are not being scaled and offset for highest contrast as otherwise typical for imaging mode. In standard configuration, we analyze image areas of (0.037 mm)2 with pixel resolution of 72 nm. Following regions of strong and weak emission we find that remain bright and dark respectively even at low temperature. Those variations increase with the mean emission wavelength of the LEDs and with temperature. The largest peak wavelength variation associated with the intensity contrast was observed in the green LEDs and amounts to 5 nm. Here the peak wavelength is higher in the dark spots than in the bright ones. This finding corresponds to the general trend when comparing the lower efficiency in longer wavelength green emitters to the blue ones.

The electroluminescence, photoluminescence and cathodoluminescence of GaInN/GaN multiple quantum well light emitting diode dies are analyzed at variable low temperature. Three dies of nominally identical structure but strongly different RT performance from 510 nm to 525 nm have been studied. The electroluminescence peak energy exhibits a blue shift from RT to 158 K followed by a red shift for lower temperature. In the same low-temperature range, a secondary emission peak appears near 390 nm (3.18 eV) that resembles a donor-acceptor pair transition from GaN. Depth profiling spectroscopy of this transition at 77 K reveals its location either in the unintentionally doped quantum barriers or within the n-GaN layer, rather than the commonly believed Mg doped p-type GaN layers. The external quantum efficiency of each die increases as the temperature is lowered. A maximum is reached for all near 158 K while for lower temperature as low as 7.7 K, the efficiency continuously drops. The pronounced efficiency maximum is tentatively assigned to a combination of temperature dependent mobility and shift of the actual pn-junction location.

Experimental wet chemical approaches to complex an iron atom with two C60 fullerenes, representing a new molecule, dubbed a “bucky dumbbell,” have been demonstrated. The structure of this molecule has been determined by 13C solid-state nuclear magnetic resonance (NMR) and electron paramagnetic resonance (EPR). Furthermore, this structure has been shown to have unique binding sites for dihydrogen molecules with the technique of temperature programmed desorption (TPD). The new adsorption sites have binding energies that are stronger than that observed for hydrogen physisorbed on planar graphite, but significantly weaker than a chemical C-H bond. Further development of these molecules could make them ideal candidates for onboard vehicular hydrogen storage.

In an attempt to identify the performance limiting factors of green GaInN/GaN light emitting diodes (LEDs) we analyze a large number of LED dies fabricated from over 160 epitaxy runs covering the wavelength range from 390 – 580 nm on a quantitative scale of the emission power. As a function of drive current, we analyze the external quantum efficiency (EQE) with particular emphasis on the low current range. We observe three very distinct populations of EQE behaviors. We find that the EQE maximum value has a strong correlation with the forward current in this point, while it has weak correspondences with both, the forward voltage in this point, and the dominant wavelength at 20 mA. The very good linear relationship between the forward voltage in green LED dies at 1 mA and at 20 mA is also observed. All those characteristics are meaningful traits to ultimately converge to a physical electronic transport and bandstructure model for the next step enhancement of green and deep green GaInN/GaN LED performance.

Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs) is critical to their performance optimization and time-to-failure analysis. Typically, device performance data needs to be corroborated with structural information such as layer thicknesses, charge profiles, and the absolute location of the pn-junction. Here, non-destructive testing by capacitance-voltage profiling is being applied to AlGaInN LED structures. Within a large set of samples with different active layer geometry, we observe distinct layers of high mobile charge accumulation. We correlate those with layer thicknesses derived from an x-ray diffraction analysis of the corresponding epiwafers. In this way, we identify the charge maxima as the upper and lower interfaces of the p-type AlGaN electron blocking layer to the neighboring GaN layers. By means of this successful analysis, we now have the opportunity to monitor epi process performance and stability as well as device degradation progress quasi-continuously over the device lifetime in a non-destructive mode.

The majority of the world energy consumption is derived from fossil fuels. Furthermore, the United States (US) consumption of petroleum vastly exceeds its production, with the majority of petroleum being consumed in the transportation sector. The increasing dependency on foreign fuel resources in conjunction with the severe environmental impacts of a petroleum-based society dictates that alternative renewable energy resources be developed. The US Department of Energy's (DOE's) Office of Energy Efficiency and Renewable Energy and the Office of Basic Energy Sciences are currently promoting a vehicular hydrogen-based energy economy. However, none of the current on-board storage technologies are suitable for practical and safe deployment. Significant scientific advancement is therefore still required if a viable on-board storage technology is to be developed. A detailed discussion of the benefits of transitioning to a hydrogen-powered automotive fleet as well as the tremendous technical hurdles faced for the development of an on-board hydrogen storage system are provided here. A novel class of theoretically predicted nanostructured materials that could revolutionize hydrogen storage materials is also presented.