Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T16:50:57.213Z Has data issue: false hasContentIssue false
  • English
  • Français

PbTe Flash Evaporation on Si <100> Substrates for Heterojunction Infrared Detectors

Published online by Cambridge University Press:  21 March 2011

Sonia Guimarães ,
Sabrina de C. F. F. da Silva  and
João M. K. de Assis
Sonia Guimarães
Affiliation:
Instituto de Aeronáutica e Espaço, Divisão de Materiais, São José dos Campos, SP, Brazil.
Sabrina de C. F. F. da Silva
Affiliation:
Faculdade de Engenharia Química de Lorena, Lorena, SP, Brazil.
João M. K. de Assis
Affiliation:
Instituto de Aeronáutica e Espaço, Divisão de Materiais, São José dos Campos, SP, Brazil.
Get access

Abstract

This work is to present results of flash evaporation of PbTe directly over single crystals p-type Si substrates, in order to produce heterojunction infrared detectors (HIRD), working at 4.3μm IR wavelength. The evaporation was performed on modified JEOL vacuum equipment, model JEE4B(a), working with vacuum pressure around 10−5 torr, using diffusion pump. The HIRDs produced with this method presented the same detectivity (D*) values of HIRDs made with Hot Wall Epitaxial System (HWE)(b), in which PbTe epitaxial layers were grown directly over the same Si substrates, where an ionic pump reached about 10−7 torr as vacuum pressure. The best results, were obtained with PbTe layers grown with Molecular Beam Epitaxial (MBE) method(c) directly over Si substrates, where the vacuum pressure is around 10−9 torr, also using an ionic pump. The advantage of growing PbTe directly over Si wafers is that the HIRDs perform at room temperature. The detectivity values of HIRDs obtained with methods (a) and (b), were D*≈4,8 × 105 cm.Hz1/2 W−1 and with method (c), D* ≈ 6,7 × 106 cm.Hz1/2 W−1. Different technologies: (a) very low costs, (c) high technology; not very different results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H4.4.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]. Abramof, E., Ferreira, S. O., Boschetti, C. and Bandeira, I. N., Infrared Phys., 30 (1): 85–91 (1990).Google Scholar
[2]. Guimarães, S., Zassavitskii, I. and Bandeira, I. N., Brazilian Journal of Vacuum Applic.,V. 19, 1, 15–18 (2000).Google Scholar
[3]. Abramof, E., Ferreira, S. O., Rappl, P. H. O, Closs, H. and Bandeira, I. N., J. Appl. Phys., 82 (3): 1–6 (1997).Google Scholar
[4]. Suzuki, K., Tashiro, H. and Aoyama, T., Solid State Electronics 43: 27–31 (1999).Google Scholar
[5]. Rusu, M., Nicolaeseu, I.I., and Rusu, G.G., Appl. Phys. A 70: 565–571 (2000).Google Scholar
[6]. Rusu, G.G. and Rusu, M., Solid State Communications 116, 363–368 (2000).Google Scholar
[7]. Das, V. Damodara and Selvaraj, S., Solid State Communications, V. 108, 11, 873–877 (1998).Google Scholar
[8]. Boustani, M., assali, K. el, Bekkay, T., Ech-Chamikh, E., Outzourhit, A., Khiara, A. and Dreesen, L., Semicond. Sci. Technol., 12, 1658–1661 (1997).Google Scholar
[9]. Massé, G. and Djessas, K., Phys. Status Solidi a, 139 k45 (1993).Google Scholar
[10]. Henderson, R. C., J. Electrochem. Soc.: Solid-State Science and Technology, 119(6), 772–775 (1972).Google Scholar
[11]. Ishizaka, A., Nakagama, K. and Shiraki, Y., In. Proceedings of 2nd International. Japan Society Applied Physics A-10–2, Tokyo, 183—186 (1982).Google Scholar
[12]. Eagleshman, D. J., Higashi, G. S. and Cerullo, M., Appl. Phys. Lett. 59(6), 685–687 (1991).Google Scholar
[13]. Guimarães, S., Silva, S. C. F. F. da and de Assis, J. M. K., accepted to be presented at XVIII Brazilian Society of Microscopy and Microanalyses Congress, October, 2001;Google Scholar
[14]. Guimarães, S. and Silva, S. C. F. F. da, presented at 1st International Materials Symposium, Abstract Book A226, Coimbra, Portugal, April, (2001).Google Scholar
[15]. Boschetti, C., Bandeira, I. N., Closs, H., Y.Ueta, A., Rappl, P. H. O, Motisuke, P. and Abramof, E., Infrared Physics & Technology 42, 91–99 (2001).Google Scholar
[16]. Herman, M. A. and Sitter, H., ”Molecular Beam Epitaxy”, New York, N.Y, (Springer, 1996) pp.12–13.Google Scholar
[17]. Hwang, M. K., Silva, C. R. M. da, Melo, F.C.L. de, Guimarães, S. and Bressiani, A. H. A., In. Proceedings of 43°. Congresso Brasileiro de Cerâmica – 4° Congresso de Cerâmica do Mercosul, Article 325, Florianópolis, Brazil, June, (1999).Google Scholar