In this chapter basic components used in RF design are discussed. Detailed modeling and analysis of MOS transistors at high frequency can be found already in many analog books [1], [2]. Although mainly offered for analog and high-speed circuits, the model is good enough for most RF applications operating at several GHz and beyond, especially for nanometer CMOS processes used today. Thus, instead we will have a more detailed look at inductors, capacitors, and LC resonators in this chapter. We will also briefly discuss the fundamental operation of distributed circuits and transmission lines and follow up with more in Chapter 3. In Chapters 5 and 7 we will discuss some of the RF aspects of the transistors, including a more detailed noise analysis as well as substrate and gate resistance. New to this edition are Sections 1.8 and 1.9, which cover the fundamentals of wave propagation and antennas.
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