Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.Read more
- Two new chapters cover read and write operations of commonly used SRAM, DRAM and non-volatile memory arrays, in addition to silicon-on-insulator (SOI) devices
- 18 useful appendices discuss topics such as spatial variation of quasi-Fermi potentials and power gain of a two-port network
- New homework exercises at the end of every chapter engage students with real-life problems and test their understanding
Reviews & endorsements
"For the past several years, I’ve taught from Taur and Ning’s book because it’s best at connecting advanced device physics to real world device, circuit, and system technology. The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems. The best book of its kind is now even better."
Mark Lundstrom, Purdue UniversitySee more reviews
"I have taught a few VLSI device courses with the 1st edition as a textbook. Those were enjoyable experiences and the book was well received by students. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices. I strongly recommend this book as a text or a reference in semiconductor device courses."
Byung-Gook Park, Seoul National University
"Fundamentals of Modern VLSI Devices, by Taur and Ning, has been an important reference text for our graduate semiconductor device physics course at UC Berkeley for several years. It provides a well-written review of the operation of MOSFETs and BJTs. The new edition expands on this by introducing major new topics related to memories, silicon on insulator devices, and scale length and high field modeling as applied to MOSFETs. By including this material, this text is now positioned to be the primary text for typical graduate device physics courses, and will meet the needs of both students and instructors through it's combination of detailed, well-written, and easy to follow descriptions of device operation, coupled with exercises and assignments for testing understanding of the relevant course material."
Vivek Subramanian, UC Berkeley
"This second edition of Fundamentals of Modern VLSI Devices builds on the tremendous success enjoyed by the original book. It provides well-organized and in-depth discussions on all relevant aspects of modern MOSFET and BJT devices, with an excellent balance of physics and mathematics. Every chapter is revised to reflect advances in VLSI devices in the last 10 years since the publication of the original book. Two new chapters on memory and silicon-on-insulator devices have been included along with nine additional appendixes. The problems at the end of each chapter are carefully designed and serve to help the readers better understand the key concepts."
Wei Lu, University of Michigan
10th May 2016 by Pjimbee
Covers the basics work functions and parameter of transistor, and substantial for the beginners.
Review was not posted due to profanity×
- Edition: 2nd Edition
- Date Published: June 2013
- format: Paperback
- isbn: 9781107635715
- length: 680 pages
- dimensions: 246 x 173 x 31 mm
- weight: 1.32kg
- availability: In stock
Table of Contents
Physical constants and unit conversions
List of symbols
Preface to the second edition
Preface to the first edition
2. Basic device physics
3. MOSFET devices
4. CMOS device design
5. CMOS performance factors
6. Bipolar devices
7. Bipolar device design
8. Bipolar performance factors
9. Memory devices
10. Silicon-on-insulator devices
1. CMOS process flow
2. Outline of a process for fabricating modern n-p-n bipolar transistors
3. Einstein relations
4. Spatial variation of quasi-Fermi potentials
5. Generation and recombination processes and space-charge-region current
6. Diffusion capacitance of a p-n diode
7. Image-force-induced barrier lowering
8. Electron-initiated and hole-initiated avalanche breakdown
9. An analytical solution for the short-channel effect in subthreshold
10. Generalized MOSFET scale length model
11. Drain current model of a ballistic MOSFET
12. Quantum-mechanical solution in weak inversion
13. Power gain of a two-port network
14. Unity-gain frequencies of a MOSFET transistor
15. Determination of emitter and base series resistances
16. Intrinsic-base resistance
17. Energy-band diagram of a Si-SiGe n-p diode
18. fr and fmax of a bipolar transistor
Find resources associated with this titleYour search for '' returned .
Type Name Unlocked * Format Size
*This title has one or more locked files and access is given only to instructors adopting the textbook for their class. We need to enforce this strictly so that solutions are not made available to students. To gain access to locked resources you either need first to sign in or register for an account.
These resources are provided free of charge by Cambridge University Press with permission of the author of the corresponding work, but are subject to copyright. You are permitted to view, print and download these resources for your own personal use only, provided any copyright lines on the resources are not removed or altered in any way. Any other use, including but not limited to distribution of the resources in modified form, or via electronic or other media, is strictly prohibited unless you have permission from the author of the corresponding work and provided you give appropriate acknowledgement of the source.
If you are having problems accessing these resources please email email@example.com
Sorry, this resource is locked
Please register or sign in to request access. If you are having problems accessing these resources please email firstname.lastname@example.orgRegister Sign in
You are now leaving the Cambridge University Press website. Your eBook purchase and download will be completed by our partner www.ebooks.com. Please see the permission section of the www.ebooks.com catalogue page for details of the print & copy limits on our eBooks.Continue ×