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Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

$67.99 (P)

  • Date Published: October 2013
  • availability: In stock
  • format: Hardback
  • isbn: 9781107030411

$ 67.99 (P)
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About the Authors
  • Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

    • Presents multi-gate MOSFET theory and optimal device design, including FinFETs
    • Introduces a compact model for generic DG MOSFETS, UFDG, which is a useful aid to understanding UTB device fundamentals as well as device and circuit design
    • UFDG/Spice3 simulation results are used to clarify the discussions of the fundamentals and to give added physical insights on their effects
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    Product details

    • Date Published: October 2013
    • format: Hardback
    • isbn: 9781107030411
    • length: 226 pages
    • dimensions: 252 x 178 x 15 mm
    • weight: 0.61kg
    • contains: 129 b/w illus. 15 tables 54 exercises
    • availability: In stock
  • Table of Contents

    Preface
    List of physical constants
    List of symbols
    1. Introduction
    2. Unique features of UTB MOSFETs
    3. Planar fully depleted SOI MOSFETs
    4. FinFETs
    Appendix: UFDG
    References
    Index.

  • Authors

    Jerry G. Fossum, University of Florida
    Jerry G. Fossum is Distinguished Professor Emeritus of Electrical and Computer Engineering at the University of Florida, Gainesville, and a Fellow of the IEEE. He won the IEEE/EDS J. J. Ebers Award in 2004 for 'outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling'.

    Vishal P. Trivedi, Freescale Semiconductor, Arizona
    Vishal P. Trivedi is a Member of the Technical Staff and a Distinguished Innovator at Freescale Semiconductor, Inc., and a Senior Member of the IEEE.

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