Skip to content
Register Sign in Wishlist
Look Inside Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II

Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II

Volume 1432

$88.00 (C)

Part of MRS Proceedings

S. Kamiya, K. Takaki, S. Imai, J. Yoshida, M. Funabashi, Y. Kawakita, K. Hiraiwa, T. Suzuki, H. Shimizu, N. Tsukiji, T. Ishikawa, A. Kasukawa, Robert W. Herrick, J. Anaya, A. Martin-Martin, J. Souto, P. Iñiguez, J. Jimenez, Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, Jui F. Chien, Ching H. Chen, Jing J. Shyue, Miin J. Chen, Guoqiang Li, Hui Yang, Sunday O. Adekoya, Marcus A. Eleruja, Bolutife Olofinjana, Olumide O. Akinwunmi, Bidini A. Taleatu, Ezekiel O. B. Ajayi, Liang Tang, Yuefeng Wang, Gary Cheng, Michael J. Manfra, Timothy D. Sands, M. Baseer Haider, M. F. Al-Kuhaili, S. M. A. Durrani, Imran Bakhtiari, Julia K. C. Abbott, J. Daniel Brasfield, Philip D. Rack, Gerd J. Duscher, Charles S. Feigerle, Andrew B. Yankovich, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, P. M. Voyles, Chiao-Yun Chang, Huei-Min Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Chih Ming Lai, Junning Gao, Wanqi Jie, Lin Luo, Yanyan Yuan, Tao Wang, Shouzhi Xi, Hui Yu, Erfan Baghani, Stephen K. O'Leary, Kei Suzuki, Masaki Wakita, Yuzo Shinozuka, Ryan M. France, Myles A. Steiner, Henri Nykänen, Sami Suihkonen, Lucasz Kilanski, Markku Sopanen, Filip Tuomisto, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Antonio Stocco, Toshihiro Ohki, Masahito Kanamura, Yoichi Kamada, Kozo Makiyama, Yusuke Inoue, Naoya Okamoto, Kenji Imanishi, Kazukiyo Joshin, Toshihide Kikkawa, D. Cheney, R. Deist, B. Gila, F. Ren, P. Whiting, J. Navales, E. Douglas, S. Pearton, S. DasGupta, M. Sun, A. Armstrong, R. Kaplar, M. Marinella, J. Stanley, M. Smith, S. Atcitty, T. Palacios, Kazuto Koike, Ryugo Fujimoto, Ryota Wada, Shigehiko Sasa, Mitsuaki Yano, Shun-ichi Gonda, Ryoya Ishigami, Kyo Kume, Josephine J. Sheng, David. C. Chapman, David M. Wilt, Stephen J. Polly, Christopher G. Bailey, Christopher Kerestes, Seth M. Hubbard, Sang M. Han, Jonathan D. Major, Leon Bowen, Robert E. Treharne, Ken Durose, Hantsun Chung, Jian-Zhang Chen, I-Chun Cheng
View all contributors
  • Date Published: August 2012
  • availability: In stock
  • format: Hardback
  • isbn: 9781605114095

$ 88.00 (C)
Hardback

Add to cart Add to wishlist

Looking for an examination copy?

If you are interested in the title for your course we can consider offering an examination copy. To register your interest please contact collegesales@cambridge.org providing details of the course you are teaching.

Description
Product filter button
Description
Contents
Resources
Courses
About the Authors
  • Symposium G, “Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II,” was held April 9–13 at the 2012 MRS Spring Meeting in San Francisco, California. Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to the materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding, packaging, etc. This symposium presented state-of-the-art results on reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin-film growth, wafer processing, and device fabrication processes.

    Customer reviews

    Not yet reviewed

    Be the first to review

    Review was not posted due to profanity

    ×

    , create a review

    (If you're not , sign out)

    Please enter the right captcha value
    Please enter a star rating.
    Your review must be a minimum of 12 words.

    How do you rate this item?

    ×

    Product details

    • Date Published: August 2012
    • format: Hardback
    • isbn: 9781605114095
    • length: 212 pages
    • dimensions: 275 x 160 x 15 mm
    • weight: 0.46kg
    • contains: 137 b/w illus. 11 tables
    • availability: In stock
  • Table of Contents

    Part I. Laser Reliability and Defects:
    1. Highly reliable 1060nm vertical cavity surface emitting lasers (VCSELs) for optical interconnect
    2. Design for reliability and common failure mechanisms in vertical cavity surface emitting lasers
    3. Thermomechanical modelling of high power laser diode degradation
    4. Study of the deep levels of a GaAs/p-GaAs12xBix heterostructure grown by molecular beam epitaxy
    Part II. LEDS and Crystal Growth:
    5. Local electronic structure and UV electroluminescence of n-ZnO:N/P-GaN heterojunction LEDs grown by remote plasma atomic layer deposition
    6. An easy approach to identify dislocation types in GaN films through selective chemical etching and atom force microscopy
    7. Enhanced light absorption in textured metal organic chemical vapour deposited (MOCVD) CdO thin films
    8. Free standing GaN nano membrane by laser lift-off method
    9. Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition
    10. Chemical vapor deposition of boron phosphide thin films
    Part III. Characterization and Theoretical Calculation:
    11. Absence of lateral composition fluctuations in aberration-corrected STEM images of an InGaN quantum well at low dose
    12. Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures
    13. TEM study on defects in epitaxial CdZnTe films deposited on (001)GaAs by close-spaced sublimation
    14. The occupancy of the threading dislocation lines within n-type gallium nitride: recent progress
    Part IV. Recombination Enhanced Point Defect Reaction:
    15. Feedback and inflation mechanism in successive multiphonon carrier captures at deep-level defects
    16. High-irradiance degradation studies of metamorphic 1eV GaInAs solar cells
    17. Ga-vacancy activation under low energy electron irradiation in GaN-based materials
    Part V. HEMT Reliability:
    18. GaN HEMT reliability: from time dependent gate degradation to on-state failure mechanisms
    19. Recent reliability progress of GaN HEMT power amplifiers
    20. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method
    21. Impact of the Al mole fraction in the bulk- and surface-state induced instability of AlGaN/GaN HEMTs
    Part VI. Radiation Effect:
    22. 8 MeV proton irradiation damage and its recovery by annealing on single-crystalline zinc oxide crystals
    Part VII. Solar Cells and TFTS:
    23. Temperature dependent characterization of imbedded InAs quantum dots in GaAs superlattice solar cell structures by high resolution X-ray diffraction
    24. Assessment of photovoltaic junction position in CdTe solar cells using a combined FIB-EBIC technique
    25. Characterization of rf-sputtered HfMgZnO thin films.

  • Editors

    Osamu Ueda, Kanazawa Institute of Technology

    Mitsuo Fukuda, Toyohashi University of Technology

    Kenji Shiojima, Fukui University, Japan

    Edwin Piner, Texas State University, San Marcos

    Contributors

    S. Kamiya, K. Takaki, S. Imai, J. Yoshida, M. Funabashi, Y. Kawakita, K. Hiraiwa, T. Suzuki, H. Shimizu, N. Tsukiji, T. Ishikawa, A. Kasukawa, Robert W. Herrick, J. Anaya, A. Martin-Martin, J. Souto, P. Iñiguez, J. Jimenez, Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, Jui F. Chien, Ching H. Chen, Jing J. Shyue, Miin J. Chen, Guoqiang Li, Hui Yang, Sunday O. Adekoya, Marcus A. Eleruja, Bolutife Olofinjana, Olumide O. Akinwunmi, Bidini A. Taleatu, Ezekiel O. B. Ajayi, Liang Tang, Yuefeng Wang, Gary Cheng, Michael J. Manfra, Timothy D. Sands, M. Baseer Haider, M. F. Al-Kuhaili, S. M. A. Durrani, Imran Bakhtiari, Julia K. C. Abbott, J. Daniel Brasfield, Philip D. Rack, Gerd J. Duscher, Charles S. Feigerle, Andrew B. Yankovich, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, P. M. Voyles, Chiao-Yun Chang, Huei-Min Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Chih Ming Lai, Junning Gao, Wanqi Jie, Lin Luo, Yanyan Yuan, Tao Wang, Shouzhi Xi, Hui Yu, Erfan Baghani, Stephen K. O'Leary, Kei Suzuki, Masaki Wakita, Yuzo Shinozuka, Ryan M. France, Myles A. Steiner, Henri Nykänen, Sami Suihkonen, Lucasz Kilanski, Markku Sopanen, Filip Tuomisto, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Antonio Stocco, Toshihiro Ohki, Masahito Kanamura, Yoichi Kamada, Kozo Makiyama, Yusuke Inoue, Naoya Okamoto, Kenji Imanishi, Kazukiyo Joshin, Toshihide Kikkawa, D. Cheney, R. Deist, B. Gila, F. Ren, P. Whiting, J. Navales, E. Douglas, S. Pearton, S. DasGupta, M. Sun, A. Armstrong, R. Kaplar, M. Marinella, J. Stanley, M. Smith, S. Atcitty, T. Palacios, Kazuto Koike, Ryugo Fujimoto, Ryota Wada, Shigehiko Sasa, Mitsuaki Yano, Shun-ichi Gonda, Ryoya Ishigami, Kyo Kume, Josephine J. Sheng, David. C. Chapman, David M. Wilt, Stephen J. Polly, Christopher G. Bailey, Christopher Kerestes, Seth M. Hubbard, Sang M. Han, Jonathan D. Major, Leon Bowen, Robert E. Treharne, Ken Durose, Hantsun Chung, Jian-Zhang Chen, I-Chun Cheng

Sign In

Please sign in to access your account

Cancel

Not already registered? Create an account now. ×

Sorry, this resource is locked

Please register or sign in to request access. If you are having problems accessing these resources please email lecturers@cambridge.org

Register Sign in
Please note that this file is password protected. You will be asked to input your password on the next screen.

» Proceed

You are now leaving the Cambridge University Press website. Your eBook purchase and download will be completed by our partner www.ebooks.com. Please see the permission section of the www.ebooks.com catalogue page for details of the print & copy limits on our eBooks.

Continue ×

Continue ×

Continue ×

Find content that relates to you

Join us online

This site uses cookies to improve your experience. Read more Close

Are you sure you want to delete your account?

This cannot be undone.

Cancel

Thank you for your feedback which will help us improve our service.

If you requested a response, we will make sure to get back to you shortly.

×
Please fill in the required fields in your feedback submission.
×