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Efficiency and linearity analysis of a burst mode RF PA with direct filter connection

Published online by Cambridge University Press:  04 April 2011

Brecht François*
Affiliation:
MICAS-ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Heverlee-Leuven, Belgium.
Peter Singerl
Affiliation:
Infineon Technologies Austria, Siemensstrasse 2, 9500 Villach, Austria.
Andreas Wiesbauer
Affiliation:
Infineon Technologies Austria, Siemensstrasse 2, 9500 Villach, Austria.
Patrick Reynaert
Affiliation:
MICAS-ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Heverlee-Leuven, Belgium.
*
Corresponding author: B. François Email: brecht.francois@esat.kuleuven.be

Abstract

Burst mode operation is proposed as an efficiency improving technique for power amplifiers. The core idea is to modulate the amplitude of the envelope signal into a series of square-wave pulses such that the width of the signal burst or the total amount of pulses are varied according to the envelope. The phase information is still contained by the timing of the pulses. This work presents the efficiency and linearity analysis of burst mode radio frequency (RF)/power amplifier (PA). In addition, the efficiency performance is compared when the burst mode RF power amplifiers (PA) is connected to a wideband load or a narrowband filter. It is shown that burst mode PAs are more efficient than the conventional Class B PAs. To achieve an even more favorable efficiency, a transmission line is inserted between the output of the switching RF PA and the filter to improve the filter's impedance characteristic. Additionally, the efficiency and linearity of the burst mode PA with and without transmission line has been studied and simulated thoroughly. To demonstrate the validity of the efficiency formulas and linearity considerations, a printed circuit board (PCB)-mounted burst mode PA using a laterally diffused metal oxide semiconductor (LDMOS) transistor was fabricated. Measurements show a peak efficiency of 78% and 28.8 dBm of output power.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]Reynaert, P.; Steyaert, M.: A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE IEEE J. Solid-State Circuits, 40 (12) (2005), 25982608.CrossRefGoogle Scholar
[2]Wang, F. et al. : An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11g WLAN applications, IEE Trans. Microw. Theory Tech., 54 (12) (2006), 40864099.CrossRefGoogle Scholar
[3]Raab, F. et al. : Power amplifiers and transmitters for RF and microwave, IEEE Trans. Microw. Theory Tech., 50 (3) (2002), 817826.CrossRefGoogle Scholar
[4]Raab, F. et al. : RF and microwave power amplifier and transmitter technologies – Part 5, High Frequency Electronics, 3 (1) (2004), 4654.Google Scholar
[5]François, B.; Reynaert, P.; Wiesbauer, A.; Singerl, P.: Analysis of Burst-Mode RF PA with direct filter connection, in 2010 European Microwave Conference (EuMC), 2010, pp. 974977.Google Scholar
[6]Nielsen, M.; Larsen, T.: An RF pulsewidth modulator for switch-mode power amplification of varying envelope signals, in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2007, pp. 277280.CrossRefGoogle Scholar
[7]Nielsen, M.; Larsen, T.: A 2-GHz GaAs HBT RF pulsewidth modulator, IEEE Trans. Microw. Theory Tech., 56 (2) (2008), 300304.Google Scholar
[8]Keyze, J.; Uang, R.; Sugiyama, Y.; Iwamoto, M.; Galton, I.; Asbeck, P.: Generation of RF pulsewidth modulated microwave sigmals using delta-sigma modulation, in 2002 IEEE MTT-S Int. Microwave Symp. Digest, 2002.CrossRefGoogle Scholar
[9]Wagh, P.; Midya, P.; Rakers, P.: Distortionless RF pulse width modulation, in The 2002 45th Midwest Symp. Circuits and Systems, 2002. vol. 1, 2002, pp. I – 124–7 vol. 1.Google Scholar
[10]Raab, F.: Radio frequency pulsewith modulation, IEEE Trans. Commun., 21 (8) (1973), 958966.CrossRefGoogle Scholar
[11]Raab, F.: Class-D power amplifier with RF pulse-width modulation, in 2010 IEEE MTT-S Int. Microwave Sym. Digest (MTT), May 2010, pp. 924927.Google Scholar
[12]Hung, T.-P.; Rode, J.; Larson, L.; Asbeck, P.: Design of H-bridge Class-D power amplifiers for digital pulse modulation transmitters, IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 28452855.CrossRefGoogle Scholar
[13]Raab, F.: Class-F power amplifiers with maximally flat waveforms, IEEE Trans. Microw. Theory Tech., 45 (11) (1997), 20072012.CrossRefGoogle Scholar
[14]Sokal, N.: Class-E switching-mode high-efficiency tuned RF/microwave power amplifier: improved design equations, in 2000 IEEE MTT-S Int. Microwave Symp. Digest., 2002.Google Scholar
[15]Sokal, N.; Sokal, A.: Class E-A new class of high-efficiency tuned single-ended switching power amplifiers, IEEE J. Solid-State Circuits, 10 (3) (1975), 168176.CrossRefGoogle Scholar
[16]Raab, F.: Idealized operation of the class E tuned power amplifier, IEEE Trans. Circuits Syst., 24 (12) (1977), 725735.Google Scholar
[17]Jeon, Y.-S.; Yang, H.-S.; Nam, S.: A novel high-efficiency linear transmitter using injection-locked pulsed oscillator, IEEE Microw. Wirel. Compon. Lett., 15 (4) (2005), 214216.Google Scholar