Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Janzén, E
Kordina, O
Henry, A
Chen, W M
Son, N T
Monemar, B
Sörman, E
Bergman, P
Harris, C I
Yakimova, R
Tuominen, M
Konstantinov, A O
Hallin, C
and
Hemmingsson, C
1994.
SiC – a semiconductor for high-power, high-temperature and high-frequency devices.
Physica Scripta,
Vol. T54,
Issue. ,
p.
283.
Tanaka, Satoru
Kern, R. Scott
and
Davis, Robert F.
1994.
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy.
Applied Physics Letters,
Vol. 65,
Issue. 22,
p.
2851.
Cosgrove, J. E.
Rosenthal, P. A.
Hamblen, D.
Fenner, D. B.
and
Yang, C.
1995.
Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition.
MRS Proceedings,
Vol. 410,
Issue. ,
Davis, Robert F.
1995.
Silicon Carbide: the Premier Paradigm for Structural and Microelectronic Device Applications in Severe Environments.
MRS Proceedings,
Vol. 410,
Issue. ,
Fissel, A.
Kaiser, U.
Ducke, E.
Schröter, B.
and
Richter, W.
1995.
Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy.
Journal of Crystal Growth,
Vol. 154,
Issue. 1-2,
p.
72.
Rowland, L.B.
Burk, A.A.
Clarke, R.C.
Siergiej, R.R.
Sriram, S.
Augustine, G.
Hobgood, H.M.
and
Driver, M.C.
1995.
Vapor phase 6H and 4H SiC epitaxy for high-speed devices.
p.
31.
Davis, Robert F.
Tanaka, S.
Rowland, L.B.
Kern, R.S.
Sitar, Z.
Ailey, S.K.
and
Wang, C.
1996.
Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization.
Journal of Crystal Growth,
Vol. 164,
Issue. 1-4,
p.
132.
Tanaka, Satoru
Kern, R.Scott
Davis, Robert F.
Wendelken, John F.
and
Xu, Jun
1996.
Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy.
Surface Science,
Vol. 350,
Issue. 1-3,
p.
247.
Wesch, W.
1996.
Silicon carbide: synthesis and processing.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 116,
Issue. 1-4,
p.
305.
Owman, Fredrik
Hallin, C.
Mårtensson, Per
and
Janzén, E.
1996.
Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching.
Journal of Crystal Growth,
Vol. 167,
Issue. 1-2,
p.
391.
Kern, R.S.
Järrendahl, K.
Tanaka, S.
and
Davis, R.F.
1997.
Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization.
Diamond and Related Materials,
Vol. 6,
Issue. 10,
p.
1282.
Kern, R.S.
and
Davis, Robert F.
1997.
Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research.
Materials Science and Engineering: B,
Vol. 46,
Issue. 1-3,
p.
240.
Lebedev, Alexander A.
Savkina, Natalia S.
Strel'chuk, Anatolii M.
Tregubova, Alla S.
and
Scheglov, Mikhail P.
1997.
6H-3C SiC structures grown by sublimation epitaxy.
Materials Science and Engineering: B,
Vol. 46,
Issue. 1-3,
p.
168.
Davis, Robert F.
Tanaka, S.
Kern, S.
Bremser, M.
Ailey, K. S.
Perry, W.
and
Zheleva, T.
1998.
Ceramic Microstructures.
p.
629.
Stout, Phillip J.
1998.
Modeling surface kinetics and morphology during 3C, 2H, 4H, and 6H–SiC (111) step-flow growth.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 16,
Issue. 6,
p.
3314.
Kern, R.S.
Tanaka, S.
Rowland, L.B.
and
Davis, R.F.
1998.
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy.
Journal of Crystal Growth,
Vol. 183,
Issue. 4,
p.
581.
Burk, A.A
O'Loughlin, M.J
Siergiej, R.R
Agarwal, A.K
Sriram, S
Clarke, R.C
MacMillan, M.F
Balakrishna, V
and
Brandt, C.D
1999.
SiC and GaN wide bandgap semiconductor materials and devices.
Solid-State Electronics,
Vol. 43,
Issue. 8,
p.
1459.
Fissel, A.
Pfennighaus, K.
Kaiser, U.
Schröter, B.
and
Richter, W.
1999.
Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy.
Journal of Electronic Materials,
Vol. 28,
Issue. 3,
p.
206.
Fissel, Andreas
Schröter, Bernd
and
Richter, Wolfgang
1999.
Advances in Solid State Physics 38.
Vol. 38,
Issue. ,
p.
87.
Kaiser, U.
Khodos, I.
Brown, P. D.
Chuvilin, A.
Albrecht, M.
Humphreys, C. J.
Fissel, A.
and
Richter, W.
1999.
A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy.
Journal of Materials Research,
Vol. 14,
Issue. 8,
p.
3226.