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Imaging of piezoelectric activity in laser-ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy

Published online by Cambridge University Press:  31 January 2011

Parmanand Sharma ,
K. Sreenivas ,
L. M. Belova  and
K. V. Rao
Parmanand Sharma*
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
K. Sreenivas
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
L. M. Belova
Affiliation:
Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, S-100 44 Stockholm, Sweden, and General Physics Institute, Moscow, 117942, Russia
K. V. Rao
Affiliation:
Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, S-100 44 Stockholm, Sweden
*
a) Address all correspondence to this author. Present address: Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai, 980-8577, Japan. e-mail: sharmap@imr.tohoku.ac.jp
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Abstract

A LiNbO3/ZnO multilayer with a preferred c-axis orientation normal to the plane of the substrate was grown on glass and SiO2/Si substrates by laser ablation. The piezoelectric activity in as-deposited films was demonstrated using a novel approach to the atomic force microscope. In the presence of an in-plane, low-frequency (0.1–5 Hz) alternating current electric field, we monitored and imaged the induced piezoelectric response normal to the film plane between two electrodes.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 9 , September 2003 , pp. 2025 - 2028
Copyright
Copyright © Materials Research Society 2003

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