Article contents
Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors
Published online by Cambridge University Press: 31 January 2011
Abstract
SrBi2Ta2O9 (SBT) films were prepared on Pt/TiO2/SiO2/Si substrates at 750 °C in oxygen by the metalorganic decomposition method. SBT film capacitors were postannealed in Ar (N2) at 350–750 °C and then reannealed in O2 at 750 °C. Effects of annealing atmosphere on the structure, morphology, and ferroelectric properties have been investigated systematically. The composition analyses indicate Ar- or N2-annealing at 750 °C leads to Bi evaporation and oxygen loss. Above 550 °C 100% Ar or N2 postannealing, the remnant polarization decreases and the coercive field increases significantly. The subsequent O2 recovery can hardly rejuvenate the electrical properties. The result is different from that with the effective O2 recovery in forming gas processing (annealing in an atmosphere containing 5% hydrogen). The possible origin and mechanism is discussed and proposed.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 2001
References
REFERENCES
- 1
- Cited by