Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-14T00:56:41.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping

Published online by Cambridge University Press:  31 January 2011

Young-Sam Jeon ,
Hyunho Shin ,
Young-Hyun Lee  and
Sang-Won Kang
Young-Sam Jeon
Affiliation:
Device and Materials Laboratory, LG Electronics Institute of Technology, Woomyeon-dong, Seocho-gu, Seoul 137-724, Republic of Korea; and Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejeon 305-701, Republic of Korea
Hyunho Shin*
Affiliation:
Department of Ceramic Engineering, Kangnung National University, Kangnung, Jibyun-dong, 210-702, Republic of Korea
Young-Hyun Lee
Affiliation:
Device and Materials Laboratory, LG Electronics Institute of Technology, Woomyeon-dong, Seocho-gu, Seoul 137-724, Republic of Korea
Sang-Won Kang
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejeon 305-701, Republic of Korea
*
a)Address all correspondence to this author. e-mail: hshin@kangnung.ac.kr
Get access

Abstract

A post heat treatment of reaction-sintered SiC at 1700 °C in nitrogen atmosphere significantly reduced electrical resistivity. A trace of insulating Si3N4 phase was detected via nitrogen heat treatment in high-resolution transmission electron microscopy observation; however, based on x-ray photoelectron spectroscopy, the evidence of nitrogen doping into SiC lattice has been claimed as the mechanism to the decreased resistivity. The increase of the total volume of SiC was apparent in x-ray diffraction during the nitrogen heat treatment, which was interpreted to stem from the growth of the nitrogen-doped intergranular SiC particles and surface doping of the primary SiC to reduce the contact resistance between the primary SiC particles.

Keywords

CeramicSinteringDopant
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 1020 - 1025
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Trantina, G.G.Mehan, R.L.: High-temperature time-dependent strength of an Si/SiC composite. J. Am. Ceram. Soc. 60, 177 1977CrossRefGoogle Scholar
2Mehan, R.L.: Effect of SiC content and orientation on the properties of Si/SiC ceramic composite. J. Mater. Sci. 13, 358 1978CrossRefGoogle Scholar
3Hilling, W.B., Mehan, R.L., Morelock, C.R., Decarlo, V.J.Laskow, W.: Silicon/silicon carbide composite. Am. Ceram. Bull. 54, 1054 1975Google Scholar
4Luthra, K.L., Singh, R.N.Brun, M.K.: Toughened silicomp composites—process and preliminary properties. Am. Ceram. Soc. Bull. 72, 79 1993Google Scholar
5Hilling, W.B.: Making ceramic composites by melt infiltration. Am. Ceram. Soc. Bull. 73, 56 1994Google Scholar
6Fumio, O.: Method of producing silicon carbide sintered body for heater, U.S. Patent No. 2007117722 (2007),Google Scholar
7Tian, Z., Quick, N.R.Kar, A.: Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide. Acta Mater. 54, 4273 2006CrossRefGoogle Scholar
8Azaroff, L.V.: Elements of X-ray Crystallography McGraw-Hill Book Co New York 1968Google Scholar
9Jepps, N.W.: Polytypism and polytype transformations in silicon carbide. Ph.D. Thesis, University of Cambridge,1979Google Scholar
10Lim, C-B.Iseki, T.: Formation and transportation of intergranular and nodular fine-grained β-SiC in reaction-sintered SiC. Adv. Ceram. Mater. 3, 590 1988CrossRefGoogle Scholar
11van Dijen, F., Vogt, U.Overturf, D.: A comparative study of the sintering of alpha and beta silicon carbide in Structural Ceramics and Composites: Euro Ceramics II, Vol. 2 edited by G. Ziegler and H. Hausner DKG Cologne, Germany 1993 781–790Google Scholar
12Heine, V.: The preference of silicon carbide for growth in the metastable cubic form. J. Am. Ceram. Soc. 74, 2630 1991CrossRefGoogle Scholar
13Kieffer, A.R., Ettmayer, P., Angel, E.Schmidt, A.: Phase stability of silicon carbide in the ternary system Si–C–N. Mater. Res. Bull. 4, S153 1969 Proc. Silicon Carbide International Conference (University Park, PA, Oct 20–23, 1968)Google Scholar
14Jepps, N.W.Page, T.F.: The 6H → 3C “reverse” transformation in silicon carbide compacts. J. Am. Ceram. Soc. 64, C-177 1981CrossRefGoogle Scholar
15Nader, M.Aldinger, F.: Influence of the α/β-SiC phase transformation on microstructure development and mechanical properties of liquid phase sintered silicon carbide. J. Mater. Sci. 34, 1197 1999CrossRefGoogle Scholar
16Kim, Y-W.: Fine-grained silicon carbide ceramics with oxynitride glass. J. Am. Ceram. Soc. 82, 2731 1999CrossRefGoogle Scholar
17Turan, S.Knowles, K.M.: α → β reverse phase transformation in silicon carbide in silicon nitride-particulate-reinforced-silicon carbide composites. J. Am. Ceram. Soc. 79, 2892 1996CrossRefGoogle Scholar
18Knippenberg, W.F.Verspui, G.: The influence of impurities on the growth of silicon carbide by recrystallization. Mater. Res. Bull. 4, S45 1969 Proc. Silicon Carbide International Conference (University Park, PA, Oct 20–23, 1968)Google Scholar
19Shen, L.Y., Hashimoto, S., Abe, K., Hayashibe, R., Yamagami, T., Nakao, M.Kamimura, K.: X-ray photoelectron spectroscopy of nitride layer on SiC by thermal nitridation using NH3. Mater. Sci. Forum 457–460, 1549 2004Google Scholar
20Pampuch, R., Bialoskoreki, J.Walasek, E.: Mechanism of reactions in the Sil + Cf system and the self-propagating high-temperature synthesis of silicon carbide. Ceram. Int. 13, 63 1987CrossRefGoogle Scholar
21Pampuch, R., Walaseki, E.Bialoskoreki, J.: Reaction mechanism in carbon–liquid silicon systems at elevated temperatures. Ceram. Int. 12, 99 1986CrossRefGoogle Scholar
22Hary, D.Davis, R.F.: Investigation of grain-boundary segregation in ceramic oxides by analytical scanning transmission electron microscopy. J. Am. Ceram. Soc 63, 546 1980Google Scholar
23Marushima, T., Ueda, N., Takeichi, M., Ishii, F.Iguchi, Y.: Nitrogen solubility in liquid silicon. Mater. Trans. 35, 821 1994CrossRefGoogle Scholar
24Scace, R.I.Slack, G.A.: Solubility of carbon in silicon and germanium. J. Chem. Phys. 30, 1551 1959CrossRefGoogle Scholar
25Can, A., McLachlan, D.S., Sauti, G.Herrmann, M.: Relationship between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy. J. Eur. Ceram. Soc. 27, 1362 2007CrossRefGoogle Scholar
26Pelissier, K., Chartier, T.Laurent, J.M.: Silicon carbide heating elements. Ceram. Int. 24, 371 1998CrossRefGoogle Scholar