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Substrate temperature: A critical parameter for the growth of microcrystalline silicon-carbon alloy thin films at low power

Published online by Cambridge University Press:  31 January 2011

Arup Dasgupta ,
S. C. Saha ,
Swati Ray  and
R. Carius
Arup Dasgupta
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700 032, India
S. C. Saha
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700 032, India
Swati Ray*
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700 032, India
R. Carius
Affiliation:
ISI-PV, Forschungszentrum, D-52425 Jülich, Germany
*
a)Address all correspondence to this author.
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Abstract

P-type microcrystalline silicon-carbon alloy thin films have been prepared at low power by employing radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) technique; judicious choice of deposition parameters is necessary. Substrate temperature has been observed to be the most critical parameter, while high hydrogen dilution is necessary but not a sufficient condition for obtaining crystallinity in silicon-carbon alloy thin films. Best microcrystallinity at moderate power density (78 mW/cm2) has been obtained at a fairly low substrate temperature (180 °C). The highest conductivity of 5.7 Scm−1 of a boron-doped microcrystalline sample could be achieved. Incorporation of carbon in these films has been confirmed from x-ray photoelectron spectroscopic (XPS) studies. Carbon is, however, incorporated only in the amorphous phase while the crystallites are of silicon only as observed from Raman spectra.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2554 - 2559
Copyright
Copyright © Materials Research Society 1999

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