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Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

Published online by Cambridge University Press:  03 March 2011

Dashan Wang*
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
James J. Tunney
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Xiaomei Du
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Michael L. Post
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Raynald Gauvin
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, Canada H3A 2B2
*
a) Address all correspondence to this author. e-mail: dashan.wang@nrc.ca
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Abstract

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

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Articles
Copyright
Copyright © Materials Research Society 2007

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