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Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

Published online by Cambridge University Press:  30 July 2021

Peter Denninger ,
Peter Schweizer ,
Christian Dolle  and
Erdmann Spiecker
Peter Denninger
Affiliation:
Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), Interdisciplinary Center for Nanostructured Films (IZNF), Department of Materials Science and Engineering, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Erlangen, Germany, Erlangen, Bayern, Germany
Peter Schweizer
Affiliation:
Empa, Thun, Switzerland
Christian Dolle
Affiliation:
Karlsruher Institut für Technologie, Karlsruhe, Baden-Wurttemberg, Germany
Erdmann Spiecker
Affiliation:
Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), Interdisciplinary Center for Nanostructured Films (IZNF), Department of Materials Science and Engineering, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Erlangen, Germany, Erlangen, Bayern, Germany

Abstract

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Type
Advances in Analytical STEM-in-SEM
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1816 - 1819
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

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Schweizer, P., Dolle, C., Spiecker, E., In situ manipulation and switching of dislocations in bilayer graphene, Science Advances 4 (2018), p. eaat4712P.CrossRefGoogle ScholarPubMed
Ophus, C., Ercius, P., Sarahan, M., Czarnik, C., Ciston, J., Recording and using 4D-STEM datasets in materials science, Microsc. Microanal. 20 (2014) 62-63.CrossRefGoogle Scholar
We gratefully acknowledge financial support by the German Research Foundation (DFG) within the frameworks of the research training group GRK1896 “In situ Microscopy with Electrons, X-rays and Scanning Probes” and the Collaborative Research Centre 953 “Synthetic C-allotropes”.Google Scholar