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Amorphous Silicon Three Color Detector

Published online by Cambridge University Press:  15 February 2011

H. Stiebig ,
J. Giehl ,
D. Knipp ,
P. Rieve  and
M. Böhm
H. Stiebig
Affiliation:
Universität-GH-Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
J. Giehl
Affiliation:
Universität-GH-Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
D. Knipp
Affiliation:
Universität-GH-Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
P. Rieve
Affiliation:
Universität-GH-Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
M. Böhm
Affiliation:
Universität-GH-Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
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Abstract

Band gap and defect engineered amorphous silicon based nipin photo diodes with bias controlled spectral response have been fabricated successfully. The devices exhibit good linearity over a wide illumination range and linearly independent spectral response curves which are required to generate a standard RGB-signal. In the bias range from -1.5 V to 1.5 V a dynamic range exceeding 90 dB for two color sensors and 80 dB for three color sensors has been observed. The general operation principle of the multispectral photo diode is discussed using a numerical simulation program. The model describes the defect state distribution of dangling bonds according to the defect-pool model and uses coherent wave propagation in the device to calculate the profile of photo generated carriers. Additionally, an analytical model has been developed to be included into standard circuit simulation programs like SPICE (Simulation Program with Integrated Circuit Emphasis). The analytical model uses linear field approximations in both i-layers of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 815
Copyright
Copyright © Materials Research Society 1995

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References

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