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An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression

Published online by Cambridge University Press:  01 February 2011

Joong Hyun Park ,
Woo Jin Nam ,
Jae Hoon Lee  and
Min Koo Han
Joong Hyun Park
Affiliation:
jhpark@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Woo Jin Nam
Affiliation:
jintree@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Jae Hoon Lee
Affiliation:
jhlee@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Min Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
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Abstract

An asymmetric dual gate poly-Si thin film transistors (TFTs), which is consist a long-gate TFT and a short-gate TFT, were fabricated in order to suppress the kink current and increase the reliability. The long-gate TFT operates in a linear regime and limits the total current flow by its current operation region. The asymmetric dual-gate does not exhibit from the kink current in a high drain bias due to the distribution of lateral electric field. The asymmetric dual-gate structure improves kink-free characteristics compared with conventional single and dual-gate TFTs. The hot-carrier stress reliability is successfully improved due to kink current suppression.

Keywords

Sipolycrystallaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A22-06
Copyright
Copyright © Materials Research Society 2006

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References

1. Fossum, J. G., Ortiz-Conde, A., Schijo, H., and Banerjee, S. K., IEEE Trans. Electron Devices, Vol. 33, No. 10, pp. 1518–1528, 1986.Google Scholar
2. Colinge, J. P., IEEE Electron Device Lett., Vol. 9, pp. 97–99, 1988.Google Scholar
3. Yoo, J. S., Kim, C. H., Lee, M. C. and Han, M. K., IEDM Tech. Dig., pp. 217–220, 2000.Google Scholar
4. Kim, J. H., Nam, W. J., Song, I. H., Park, J. H., Lee, M. C. and Han, M. K., Society for Information Displays (SID) Tech. Dig., pp. 284–287, 2004.Google Scholar
5. Colinge, J. P., IEEE Electron Device Lett., Vol. 9, pp. 97–99, 1988.Google Scholar
6. Kuo, P. Y., Chao, T. S., and Lei, T. F., IEEE Electron Device Lett. Vol. 25, No. 9, pp. 634–636, 2004.Google Scholar
7. Lee, M. C. and Han, M. K., IEEE Electron Devices Lett., Vol. 25, no. 1, pp 25–27, 2004.Google Scholar
8. Gao, M. H., Colinge, J. P., Lauwers, L., Wu, S. H., Claeys, C., IEEE SOS/SOI Technology Conf. pp. 13–14, 1990.Google Scholar