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Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy
Published online by Cambridge University Press: 22 February 2011
Abstract
Silicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.
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- Copyright © Materials Research Society 1991
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