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Characterization of AlGaAs/InGaAs/GaAs Heteroepitaxial Layers by Transmission Electron Microscopy and Energy Dispersive Spectroscopy

Published online by Cambridge University Press:  25 February 2011

R. S. Rai ,
J. M. Tartaglia ,
W. E. Quinn  and
D. C. Martel
R. S. Rai
Affiliation:
Bandgap Technology Corporation, 325 Interlocken Parkway, Broomfield, CO 80021
J. M. Tartaglia
Affiliation:
Bandgap Technology Corporation, 325 Interlocken Parkway, Broomfield, CO 80021
W. E. Quinn
Affiliation:
Bandgap Technology Corporation, 325 Interlocken Parkway, Broomfield, CO 80021
D. C. Martel
Affiliation:
Bandgap Technology Corporation, 325 Interlocken Parkway, Broomfield, CO 80021
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Abstract

AlGaAs/InGaAs/GaAs heteroepitaxial layers grown by molecular beam epitaxy were studied by cross-sectional transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). The presence of waviness/roughness, fine periodic striation contrast due to Al composition oscillations, and defects were observed by TEM in selected samples. EDS on the TEM was of limited utility in determining the composition of thin epitaxial layers and in comparing the composition near and away from a defect. Arguments are presented to rationalize these results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 161
Copyright
Copyright © Materials Research Society 1993

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References

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