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Characterization of Microcrystalline Si Films by MeV Ion Scattering Techniques

Published online by Cambridge University Press:  17 March 2011

W. Bohne ,
J. Röhrich ,
B. Selle ,
M. Birkholz ,
F. Fenske ,
W. Fuhs ,
J. Platen-Schwarzkopf  and
P. Reinig
W. Bohne
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
J. Röhrich
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
B. Selle
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
M. Birkholz
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
F. Fenske
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
J. Platen-Schwarzkopf
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
P. Reinig
Affiliation:
Hahn-Meitner-Institut, Dept. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

Rutherford Backscattering Spectroscopy (RBS) and channeling studies with 1.4 MeV−4He ions as well as Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA) with 230 MeV 129Xe ions have been applied to characterize structural properties and the impurity content of thin Si films. The analytical potential of these ion-beam techniques is demonstrated for two types of samples: (1) μc-Si films prepared by dc magnetron sputtering in a pure Ar plasma and (2) homoepitaxial Si films deposited by low-temperature electron-cyclotron resonance PECVD at the transition from oriented to disordered growth. For μc-Si the atomic area density N.d obtained by RBS was compared with the optical thickness n.d (n=refractive index) derived from the interference structure of IR reflection spectra. It is shown that the ratio R=n.d/N.d of these quantities can serve as a figure of merit for the degree of crystalline order. An apparent similarity was found in the case of the epitaxially grown films between the Si disorder profiles evaluated from the RBS channeling spectra and the hydrogen and oxygen profiles determined by HI-ERDA. This suggests that hydrogen and oxygen are preferentially incorporated in the disordered parts of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.24.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Shah, A., Torres, P., Tscharner, R., Wyrsch, N., and Keppner, H., Science 285, 692 (1999).Google Scholar
2. Hamakawa, Y., Appl. Surf. Sci. 142, 215 (1999).Google Scholar
3. Assmann, W., Davies, J.A., Dollinger, G., Forster, J.S., Huber, H., Reichelt, T., and Siegele, R., Nucl. Instr. and Meth. B 118, 242 (1996).Google Scholar
4. Birkholz, M., Platen, J., Sieber, I., Bohne, W., Röhrich, J., and Fuhs, W., Mater. Res. Soc. Symp. Proc. 557, 555 (1999).Google Scholar
5. Reinig, P., Fenske, F., Selle, B., and Fuhs, W., M.R.S. Spring Meeting 2001, San Francisco.Google Scholar
6. Platen, J., Selle, B., Christiansen, S., Nerding, M., Schmidbauer, M., Kliefoth, K., and Fuhs, W., Mater. Res. Soc. Symp. Proc. 609 (2000), in print.Google Scholar
7. Bohne, W., Röhrich, J., and Röschert, G., Nucl. Instr. and Meth. B 136–138, 633 (1998).Google Scholar
8. Handbook of Modern Ion Beam Analysis, edited by Tesmer, J.R. and Nastasi, M. (Materials Research Society, Pittsburgh, 1995).Google Scholar
9. Ion Beams for Materials Analysis, edited by Bird, J.R. and Williams, J.S. (Academic Press, Sydney, 1989).Google Scholar
10. Platen, J., Selle, B., Sieber, I., Brehme, S., Zeimer, U., and Fuhs, W., Thin Solid Films 381, 22 (2001).Google Scholar