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Characterization of the Silicon-Based Thin Film Multi-Junction Solar Cells

Published online by Cambridge University Press:  01 February 2011

Yoshihiro Hishikawa
Yoshihiro Hishikawa*
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST) Research Center for Photovoltaics Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568Japan
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Abstract

Technical issues for the performance characterization of silicon-based thin-film multi-junction devices, such as the a-Si/thin-film c-Si structure, are discussed. The measured spectral response of each component cell is affected by the shape of the I-V curves of the component cells under color bias light, as well as the applied bias voltage. This paper describes procedures for correcting the measured spectral response. High-fidelity solar simulators, which incorporate Xe lamp(s) and halogen lamps that simulate AM1.5G standard sunlight, are very useful for characterizing the I-V curves of the multi-junction devices. They can accurately reproduce the current generated in each component cell and the I-V curve of the devices under standard sunlight, with a simple spectral adjustment procedure, thanks to their basic good spectral fidelity to standard sunlight. The irradiance dependence of the I-V curve is important for translating the I-V curve under different irradiance conditions. Although translation is not straightforward for multi-junction devices, the experimental results of the present study suggest that it is possible under spectral conditions where the relative value of the photocurrent among the component cells is constant. Determination of the I-V curve of each component cell based on the I-V curves of the multi-junction devices is also mentioned.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A23.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Igari, S., Imura, Y., Shimada, S. and Watanabe, N., “Conceptual design on solar simulator for large area multi-junction PV devices”, Tech. Digest of PVSEC-11, Sapporo (1999) 707 Google Scholar
2 Shimokawa, R., Nagamine, F., Nakata, M. et al., “Supplementary-light method for measuring the conversion efficiency of multijunction solar cells”, Jpn. J. Appl. Phys. 28 (1989) L845–L84810.1143/JJAP.28.L845Google Scholar
3 Emery, K., Meusel, M., Beckart, R. et al., “Procedures for evaluating multijunction concentrators”, Proc. 28th IEEE PVSC, Anchorage (2000) 1126 Google Scholar
4 Meusel, M., Adelhelm, R., Dimroth, F. et al. “Spectral mismatch correction and spectrometric characterization of monolithic III-V multi-junction solar cells”, Prog. Photovol: Res. Appl. 10 (2002) 243 10.1002/pip.407Google Scholar
5 Meusel, M., Baur, C., Letay, G. et al.“Spectral response measurements of monolithic GaInP/Ga(In)As/Ge triple-junction solar cells: measurement artifacts and their explanation”, Prog. Photovol: Res. Appl. 11 (2003) 499–514 10.1002/pip.514Google Scholar
6 Hishikawa, Y. and Igari, S., “Characterization of the I-V curves of multi-junction solar cells/modules by high-fidelity solar simulators and their irradiance dependence”, to be published in the Proceedings of the 19th European Photovoltaic Solar Energy Conference (2004) Paris.Google Scholar
7 Burdick, J. and Glatfelter, T., “Spectral response and I-V measurements of tandem amorphous-silicon alloy solar cells”, Solar Cells, 18 (1986) 301–314 10.1016/0379-6787(86)90129-8Google Scholar
8 Tarr, N. G. and Purfrey, D. L., “An investigation of dark current and photocurrent superposition in photovoltaic devices”, Solid State Electronics 22 (1979) 265–270 10.1016/0038-1101(79)90032-7Google Scholar
9 Hishikawa, Y. and Okamoto, S.: “Dependence of the I-V characteristics of a-Si solar cells on illumination intensity and temperature”, Sol. Energy Mater. Sol. Cells 33-2 (1994) 157–168 Google Scholar
10 Hishikawa, Y., Imura, Y. and Oshiro, T.: “Irradiance-dependence and translation of the I-V characteristics of crystalline silicon solar cells”, Proc.28th IEEE Photovoltaic Specialists Conference (2000) Anchorage, 1464–1467 Google Scholar
11 Nakajima, A., Ichikawa, M., Sawada, T. et al.: “Improvement on actual output power of thin film silicon hybrid module”, Proc. WCPEC3, Osaka (2003)Google Scholar
12 Adelheim, R. and Beucher, K.: “Performance and parameter analysis of tandem solar cells using measurements at multiple spectral conditions”, Sol. Energy Mater. Sol. Cells 50 (1998) 185–195 10.1016/S0927-0248(97)00143-8Google Scholar
13 Tsuno, Y., Hishikawa, Y. and Kurokawa, K., “Separation of the I-V curve of each component cell of multi-junction solar cells”, to be published in the proceedings of the 31st IEEE Photovoltaic Specialists Conference (2005) Lake Buena Vista Google Scholar