Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-14T13:00:48.406Z Has data issue: false hasContentIssue false
  • English
  • Français

Charging and Aging Effects in Porous ULK Dielectrics

Published online by Cambridge University Press:  01 February 2011

Cyril Guedj ,
Eugenie Martinez  and
Gregory Imbert
Cyril Guedj
Affiliation:
cguedj@cea.fr, LETI-Minatec, D2NT, 17, Rue des Martyrs, Grenoble, 38540, France, 0033438789105
Eugenie Martinez
Affiliation:
Martinezeu@cea.fr, Minatec, CEA-LETI, 17, Rue des Martyrs, Grenoble, 38540, France
Gregory Imbert
Affiliation:
gregory.Imbert@st.com, STMicroelectronics, 850, Rue Jean Monnet, Crolles, 38926, France
Get access

Abstract

The down-scaling of CMOS interconnects increases dielectric reliability challenges. Porous ULK materials used in advanced interconnects may suffer from charge trapping and detrimental aging during bias-thermal stress experiments. We demonstrate that a threshold between charging and aging domains may occur for an injected electrical energy of 0.1 MJ/cm3. Electron injection in the dielectric induces hydrogen radical formation first. For more damaging current stressing, in-situ Auger experiments demonstrate that the degradation is mostly due to the modification around carbon bonds.

Keywords

electrical propertiesdielectricAuger electron spectroscopy (AES)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B06-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Planelles, J.* and Movilla, J. L., Phys. Rev. B 73, 235350 (2006)Google Scholar
2 Tanuma, S., Powell, C. J., Penn, D. R., Surf. Int. Anal. 21, 165 (1994).Google Scholar
3 Guedj, C. et al. Proc. IEEE IITC 2005 conf. (2005)Google Scholar
4 Guedj, C. et al. Proc. IEEE MAM 2005 conference (2005)Google Scholar
5 Sze, S.M., Phys. of Semicond. Dev., (1981)Google Scholar
6Handbook of Chemistry and Physics, 81st ed., edited by Lide, D. R., Raton, Boca, FL, (2001), pp. 9–52 Google Scholar
7 Jousseaume, V., Zenasni, A., Favennec, L., Gerbaud, G., Bardet, M., Simon, J. P., and Humbert, A., J. of Electrochem. Soc., 154 (5) G103–G109 (2007)Google Scholar
8 Martinez, E., Rochat, N., Guedj, C., Licitra, C., Imbert, G., Friec, Y. Le, J. Appl. Phys. 100, 124106 (2006)Google Scholar
9 Guedj, C. et al. Proc. IEEE IITC conf (2004)Google Scholar
10 Briggs, D. and Grant, J. T., Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy,IM Publications and Surface Spectra Limited (2003)Google Scholar
11 Ito, F., Takeuchi, T., Hayashi, Y., Proc. Of ADMETA conf., 10 (2005)Google Scholar
12 Steffen, H. J., Thin Solid Films, 253, 269 (1994)Google Scholar