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Coarsening Phenomenon of Si Clusters

Published online by Cambridge University Press:  25 February 2011

Hideya Kumomi  and
Takao Yonehara
Hideya Kumomi
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
Takao Yonehara
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Abstract

Coarsening phenomenon is observed among crystalline Si clusters which are deposited over silicon-oxide and -nitride surfaces by chemical vapor deposition using HC1 as an etching gas. As soon as the deposition starts, submicron-sized fine clusters nucleate and increase in number, but do not grow in size. Micron-sized large clusters emerge among the fine ones, gradually increase and rapidly grow, while the preexisting fine ones disappear finally. It is found that the fine clusters must be etched away into vapor again by HCl or reevaporated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 83
Copyright
Copyright © Materials Research Society 1991

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References

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