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Concentration Dependence of Hydrogen Diffusion in Hydrogenated Silicon

Published online by Cambridge University Press:  10 February 2011

W. Beyer  and
U. Zastrow
W. Beyer
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany, w.beyer@fz-juelich.de
U. Zastrow
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The concentration dependence of hydrogen diffusion was studied in hydrogenated crystalline and amorphous silicon prepared by hydrogen implantation into crystalline Si wafers and into amorphous silicon of low hydrogen concentration. The results are compared with data for plasma-grown a-Si:H and µc-Si:H films. The increase of the diffusion coefficient with rising hydrogen concentration in a-Si:H is explained by an (equilibrium) energy band model of hydrogen diffusion whereas the decrease of the diffusion coefficient in c-Si:H is explained by a trapping model. The different behavior is attributed to a greater flexibility of the amorphous Si network compared to the crystalline Si lattice which is also visible in a difference in hydrogen-related microstructure formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 679
Copyright
Copyright © Materials Research Society 1998

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References

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