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Correlation between Defect Structures and Light Emission in Si-Nanocrystal Doped SiO2 Films

Published online by Cambridge University Press:  09 August 2011

K. Sato ,
Y. Sugiyama ,
T. Izumi ,
M. Iwase ,
Y. Show ,
S Nozaki  and
H. Morisaki
K. Sato
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259–1292, Japan
Y. Sugiyama
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259–1292, Japan
T. Izumi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259–1292, Japan
M. Iwase
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, Japan
Y. Show
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
S Nozaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
H. Morisaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
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Abstract

Correlation between defect structures and light emission from Si-nanocrystal doped SiO2 films has been studied using electron spin resonance ( ESR ) and photoluminescence ( PL ) methods. The ESR analysis revealed the presence of three kinds of ESR centers in the film after annealing at above 900 °C in argon ( Ar ) atmosphere, i.e. Si dangling bond in amorphous Si cluster ( a-center: g=2.006 ), Si dangling bond at Si-nanocrystal/SiO2 interface ( Pb-center: g=2.003 ) and conduction electrons in Si-nanocrystal ( Pce-center: g=1.998 ). Moreover, visible light emission was observed in the annealed sample from the PL measurement. Both the PL intensity and the ESR signal intensity of the Pce-center were increased with an increase of annealing temperature. These results indicate that the Pce-center is strongly associated with the emission center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 57
Copyright
Copyright © Materials Research Society 1999

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