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CVD-Graphene Complementary Logic on Ultra-thin Multilayer Hexagonal Boron Nitride

Published online by Cambridge University Press:  30 March 2012

Edwin Kim
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, Albany, NY 12203, U.S.A. Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, CO 80921, U.S.A.
Nikhil Jain
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, Albany, NY 12203, U.S.A.
Yang Xu
Affiliation:
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Yan Han
Affiliation:
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Bin Yu
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, Albany, NY 12203, U.S.A.
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Abstract

Graphene, a two-dimensional carbon allotrope, has raised great interests as a material candidate for future electronics due to its superb carrier transport and unique physics. The demand for future-generation large-scale carbon-based electronics motivates assembly of large-area graphene and selection of ideal substrate material that best preserves the transport property of graphene. In this work, CVD-assembled large-area graphene on thin multilayer hexagonal boron nitride (h-BN) is employed to demonstrate the basic building block of digital circuit - inverter prototype made of two graphene-channel field-effect transistors (GFETs). The doping in the CVD-grown graphene, probed via electrical measurements, is implemented through non-uniform local surface chemistry. The full transfer response of the graphene logic inverter is demonstrated in the localized P/N doping region.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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