Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-17T19:38:29.775Z Has data issue: false hasContentIssue false
  • English
  • Français

Delayed Field Transient Photocurrent Measurements in a-Si:H

Published online by Cambridge University Press:  21 February 2011

Homer Antoniadis  and
E. A. Schiff
Homer Antoniadis
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13&13244–1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13&13244–1130
Get access

Abstract

We have measured the transient photocurrent in “time-of-flight” structures of a-Si:H using bias voltages applied following photocarrier generation by a laser flash. The delayed field technique appears promising both as a probe of the deep level distribution and also of photocarrier thermalization. We describe a simplified theory for the delayed field transients including the effects of the delay time and the magnitude of the applied voltage. The theory accounts for the measurements adequately.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 783
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tiedje, T., Semiconductora and Semimetals, Vol. 21C, edited by Pankove, (New York: Academic Press, 1984), p. 207.Google Scholar
[2] Marshall, J. M., Rep. Prog. Phys. 46, 1235 (1983).Google Scholar
[3] Hotaling, S. P., Antoniadis, Homer, and Schiff, E. A., J. Non-Cryst. Solids 114, 420 (1989).Google Scholar
[4] Antoniadis, Homer and Schiff, E. A., Phys. Rev. B 44, 3627 (1991).Google Scholar
[5] Antoniadis, Homer and Schiff, E. A., J. Non-Cryst. Solids 137–138, 435 (1991); Phys. Rev. B submitted.Google Scholar
[6] Seynhaeve, G. F., Barcley, R. P., Adriaenssens, G. J., and Marshall, J. M., Phys. Rev. 39, 10196 (1989).Google Scholar
[7] Spear, W. E., Steemers, H. L., and Mannsperger, H., Phil. Mag. B 48 L49 (1983).Google Scholar
[8] Silver, M. and Shanna, R., J. Chem. Phys. 46, 692 (1967).Google Scholar
[9] Mort, J., Morgan, M., Grammatica, S., Noolandi, J., and Hong, K. M., Phys. Rev. Lett. 48, 1411 (1982).Google Scholar
[10] Kastner, M. A., Solid State Comm. 45, 191 (1983).Google Scholar
[11] Street, R. A., Phys. Rev. B 27, 4924 (1983).Google Scholar
[12] Bräunlich, P., Thermally Stimulated Relaxation in Solids, Springer-Verlag Topics in Applied Physics, Vol. 37 (Berlin: Springer-Verlag, 1979).Google Scholar
[13] Hotaling, S. P., Antoniadis, Homer, and Schiff, E. A., Solar Cells 27, 357 (1989).Google Scholar
[14] Schumm, G. and Bauer, G. H., Phys. Rev. B 39, 5311 (1989).Google Scholar