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Density of States Spectroscopy in p-Type a-Si:H and a-SiC:H

Published online by Cambridge University Press:  21 February 2011

Richard S. Crandall ,
Stanley J. Salamon  and
Yueqin Xu
Richard S. Crandall
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Stanley J. Salamon
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Yueqin Xu
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
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Abstract

We derive a closed form expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy. Using this expression, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials we find that the p-layer DOS is described by an exponential increase with energy above the Fermi level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 557
Copyright
Copyright © Materials Research Society 1991

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References

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