Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-06-02T03:37:03.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer

Published online by Cambridge University Press:  26 February 2011

Jong-Jin Choi ,
Byung-Dong Hahn ,
Joo-Hee Jang ,
Woon-Ha Yoon ,
Dong-Soo Park  and
Hyoun-Ee Kim
Jong-Jin Choi
Affiliation:
finaljin@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, 66 Sang-Nam Dong, Chang-Won, Gyeong-Nam, 641-831, Korea, Republic of, 82-55-280-3371, 82-55-280-3399
Byung-Dong Hahn
Affiliation:
cera72@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Joo-Hee Jang
Affiliation:
Joohee1820@hotmail.com, Pykyong National University, Division of Materials Science and Engineering
Woon-Ha Yoon
Affiliation:
uhyoon@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Dong-Soo Park
Affiliation:
pds1590@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Hyoun-Ee Kim
Affiliation:
kimhe@snu.ac.kr, Seoul National University, School of Materials Science & Engineering
Get access

Abstract

Highly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650°C. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

Keywords

sol-geltexturepiezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-23
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Polla, D. L. and Francis, L. F., MRS Bulletin 21 [7] 59 (1996).Google Scholar
2 Du, X., Zheng, J., Belehundu, U., and Uchino, K., Appl. Phys. Lett. 72 [19] 2421 (1998).Google Scholar
3 Taylor, D. V. and Damjanovic, D., Appl. Phys. Lett. 76 [12] 1615 (2000).Google Scholar
4 Ledermann, N., Muralt, P., Baborowski, J., Gentil, S., Mukati, K., Cantoni, M.. Seifert, A., and Setter, N., Sens. Act. A. 105 162 (2003).Google Scholar
5 Brooks, K. G., Reaney, I. M., Klissurska, R., Huang, Y., Bursill, L., and Setter, N., J. Mat. Res. 9 [10] 2540 (1994).Google Scholar
6 Chen, S. and Chen, I., J. Am. Ceram. Soc. 77 [9] 2332 (1994); 77 [9] 2337 (1994).Google Scholar
7 Choi, J. J., Park, C. S., Park, G. T., and Kim, H. E., Appl. Phys. Lett. 85 [20] 4621 (2004).Google Scholar
8 Choi, J. J., Park, G. T., Park, C. S., Lee, J. W., and Kim, H. E., J. Mater. Res. 19 [12] 3671 (2004).Google Scholar
9 Park, G. T., Choi, J. J., Ryu, J., Fan, H., and Kim, H. E., Appl. Phys. Lett. 80 [24] 4606 (2002).Google Scholar
10 Du, X., Belehundu, U., and Uchino, K., Jpn. J. Appl. Phys. Part I., 36 5580 (1997).Google Scholar