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Design of Metal-Semiconductor-Metal Ultra-Violet Detector on Gallium Nitride

Published online by Cambridge University Press:  21 March 2011

Wenhua Gu ,
Soo Jin Chua  and
Xin Hai Zhang
Wenhua Gu
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260
Soo Jin Chua
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260
Xin Hai Zhang
Affiliation:
Institute of Materials Research and Engineering, Singapore 117602
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Abstract

The design of Gallium Nitride based Metal-Semiconductor-Metal Ultra-Violet detector is discussed. We introduce a simulation model using Medici to describe the performances of such detectors. Structure parameters, such as the inter-digitated electrode dimension and the GaN layer thickness, are optimized for response current and time using this model. The simulation results can be explained by the variation of depletion region. We introduce the “effective electric field intensity” to describe the depletion region. The relationship between the “effective electric field intensity” and structure parameters are simulated and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.15
Copyright
Copyright © Materials Research Society 2001

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References

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