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Double-Gated Singly-Addressable Polysilicon Tip Array Fabrication and Characterization

Published online by Cambridge University Press:  17 March 2011

N.N. Chubun ,
A.G. Chakhovskoi ,
M. Hajra  and
C.E. Hunt
N.N. Chubun
Affiliation:
Electrical and Computer Engineering Department, University of California, Davis, CA, 95616 Phone 530-752-2735, fax 530-754-9217; e-mail: nchubun@ece.ucdavis.edu
A.G. Chakhovskoi
Affiliation:
Electrical and Computer Engineering Department, University of California, Davis, CA, 95616 Phone 530-752-2735, fax 530-754-9217; e-mail: nchubun@ece.ucdavis.edu
M. Hajra
Affiliation:
Electrical and Computer Engineering Department, University of California, Davis, CA, 95616 Phone 530-752-2735, fax 530-754-9217; e-mail: nchubun@ece.ucdavis.edu
C.E. Hunt
Affiliation:
Electrical and Computer Engineering Department, University of California, Davis, CA, 95616 Phone 530-752-2735, fax 530-754-9217; e-mail: nchubun@ece.ucdavis.edu
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Abstract

Polysilicon-on-insulator singly-addressable arrays, consisting of double-gated field emission cells, were fabricated and tested. The field-emission tips were formed by a subtractive technique, using 2.5 µm thick polysilicon stripes on an insulating substrate. The tip structure was oxidized for dielectric isolation and coated with a 0.4 µm polysilicon layer as a first gate electrode. The polysilicon layer was then subsequently oxidized to provide a second isolation layer for separation from a 0.1 µm gold film, deposited as a second gate electrode. Finally, the 1.5 µm aperture was formed, combining wet etching of the silicon dioxide and dry etching of the polysilicon layers. The matrix allows addressing electrically any emission cell at the intersection of a cathode column and an extracting gate line. An independent voltage can be applied to the second gate during operation to focus the electron beam of an operating tip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D14.3.1
Copyright
Copyright © Materials Research Society 2001

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