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Effect of Wettability of Poly Silicon on CMP Behavior

Published online by Cambridge University Press:  01 February 2011

Young-Jae Kang ,
Bong-Kyun Kang ,
In-Kwon Kim ,
Jin-Goo Park ,
Yi-Koan Hong ,
Sang-Yeob Han ,
Seong-Kyu Yun ,
Bo-Un Yoon  and
Chang-Ki Hong
Young-Jae Kang
Affiliation:
k1515f@hanmail.net, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Bong-Kyun Kang
Affiliation:
brown81@hanyang.ac.kr, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
In-Kwon Kim
Affiliation:
dokman@hanmail.net, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Jin-Goo Park
Affiliation:
jgpark@hanyang.ac.kr, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Yi-Koan Hong
Affiliation:
jhonny@chollian.net, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Sang-Yeob Han
Affiliation:
sangyeob78.han@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Seong-Kyu Yun
Affiliation:
wine.yun@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Bo-Un Yoon
Affiliation:
b.yoon@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Chang-Ki Hong
Affiliation:
ck.hong@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
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Abstract

The hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

Keywords

CMPadhesiondefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C09-06
Copyright
Copyright © Materials Research Society 2007

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References

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