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Electroabsorption Spectra of Hydrogenated Amorphous and Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

Lin Jiang ,
E. A. Schiff ,
F. Finger ,
P. Hapke ,
S. Koynov ,
R. Schwarz ,
N. Wyrsch ,
A. Shah ,
J. Yang  and
S. Guha
Lin Jiang
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130
F. Finger
Affiliation:
Forschungszentrum Juelich GmbH, ISI-PV, D-52425 Juelich, Germany
P. Hapke
Affiliation:
Forschungszentrum Juelich GmbH, ISI-PV, D-52425 Juelich, Germany
S. Koynov
Affiliation:
Physics Department, Technical University of Munich, D-85747 Garching, Germany
R. Schwarz
Affiliation:
Physics Department, Technical University of Munich, D-85747 Garching, Germany
N. Wyrsch
Affiliation:
Institut de Microtechnique, University de Neuchatel, CH-2000 Neuchatel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, University de Neuchatel, CH-2000 Neuchatel, Switzerland
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
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Abstract

We report on electroabsorption spectra for plasma deposited thin films of hydrogenated silicon ranging from amorphous (a-Si:H) to microcrystalline (μc-Si-H) structures. The EA spectrum of a-Si:H deposited from silane with low hydrogen dilution were consistent with previous works; material prepared with high hydrogen dilution showed a 0.07 eV blue shift of the spectrum and somewhat stronger electroabsorption. μc-Si-H specimens have a sharp peak at 1.19eV; the spectrum is blue shifted by 0.03 eV and is significantly stronger than electroabsorption reported in single crystal silicon. Spectral features which have no correspondence to single crystal silicon were also observed in μc-Si-H. Specimens deposited using “cyclic” deposition and chemical annealing had electroabsorption spectra with both the 1.19 eV, crystalline feature and a band peaking at 2.02 eV which we attribute to strongly hydrogenated a-Si:H. We discuss applications of electroabsorption to determining the crystal fraction of microcrystalline material and to determining grain size distributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 295
Copyright
Copyright © Materials Research Society 1997

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References

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