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Electron Spin Resonance and Electronic Conductivity in Moderately Doped n-type Microcrystalline Silicon as a Probe for the Density of Gap States

Published online by Cambridge University Press:  01 February 2011

T. Dylla ,
R. Carius  and
F. Finger
T. Dylla
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
F. Finger
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Abstract

Electron spin resonance accompanied by conductivity measurements in n-type microcrystalline silicon with different doping concentrations and different structure compositions has been applied for the study of the density of gap states and the influence of these states on charge carrier density. We studied doping concentrations close to the defect density where the doping induced Fermi level (EF) shift is determined by compensation of gap states. We found a correlation between the EF shift, the intrinsic defect density and structural changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A20.9
Copyright
Copyright © Materials Research Society 2002

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