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Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

Published online by Cambridge University Press:  17 March 2011

Yong Ho Ha ,
Sehun Kim ,
Dae Won Moon ,
Ji-Hong Jhe  and
Jung H. Shin
Yong Ho Ha
Affiliation:
Department of Chemistry, School of Molecular Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-Gu, Taejon, KOREA
Sehun Kim
Affiliation:
Department of Chemistry, School of Molecular Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-Gu, Taejon, KOREA
Dae Won Moon
Affiliation:
Nano Surface Group, Korea Research Institute of Standards and Science (KRISS), Doryong-dong 1, Taejon 305-606, KOREA
Ji-Hong Jhe
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-Gu, Taejon, KOREA
Jung H. Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-Gu, Taejon, KOREA
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Abstract

The effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F17.3.1
Copyright
Copyright © Materials Research Society 2001

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