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Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)SI 6H-SiC Surfaces

Published online by Cambridge University Press:  15 February 2011

Sean W. King ,
Mark C. Benjamin ,
Richard S. Kern ,
Robert J. Nemanich  and
Robert F. Davis
Sean W. King
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695.
Mark C. Benjamin
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695.
Richard S. Kern
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695.
Robert J. Nemanich
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695.
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695.
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Abstract

Comparisons between the wetting characteristics of (0001)si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001)si 6H-SiC surfaces were hydrophilic. (0001)si 6H-SiC surfaces capped with a 20Å Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001)si 6H-SiC surfaces in UHV at 1100°C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001)si 6H-SiC surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 563
Copyright
Copyright © Materials Research Society 1996

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