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Factors Governing the Photoluminescence Yield of Erbium Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

W. Jantsch ,
H. Przybylinska ,
C. Skierbiszewski ,
S. Lanzerstorfer  and
L. Palmetshofer
W. Jantsch
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, wolfgang.jantsch@jk.uni-linz.ac.at
H. Przybylinska
Affiliation:
Inst. of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
C. Skierbiszewski
Affiliation:
Unipress, Polish Academy of Sciences, Soklowska 29/37, 01-142 Warsaw, Poland
S. Lanzerstorfer
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, wolfgang.jantsch@jk.uni-linz.ac.at
L. Palmetshofer
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, wolfgang.jantsch@jk.uni-linz.ac.at
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Abstract

We present a high resolution photoluminescence (PL) study of Si:Er which allows to distinguish a variety of Er centers occurring in Er-implanted Si. The lines belonging to a particular center are identified from the influence of processing parameters, temperature, excitation power, co-doping and hydrostatic pressure. The center-dependent high temperature yield is limited by the competition in efficiency of capturing excitons at Er centers or nearby defects followed by the excitation transfer to the Er-4f shell and by recombination of excitons at other, non-radiative centers. The excitation transfer probability is shown to depend on hydrostatic pressure of a few kbar. This effect indicates a new possibility to improve the efficiency of Si:Er light emitters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 101
Copyright
Copyright © Materials Research Society 1996

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