Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-02T03:58:28.237Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure

Published online by Cambridge University Press:  09 August 2011

V. Bondarenko ,
N. Vorozov ,
L. Dolgyi ,
V. Yakovtseva ,
V. Petrovich ,
S. Volchek ,
N. Kazuchits ,
G. Grom ,
H. A. Lopez  and
L. Tsybeskov
...Show all authors
V. Bondarenko
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
N. Vorozov
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
L. Dolgyi
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
V. Yakovtseva
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
V. Petrovich
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
S. Volchek
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, BELARUS 220027, vitaly@cit.org.by
N. Kazuchits
Affiliation:
Belarusian State University, Department of Semiconductor Physics, Minsk, BELARUS 220050
G. Grom
Affiliation:
University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627
H. A. Lopez
Affiliation:
University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627
L. Tsybeskov
Affiliation:
University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627
P. M. Fauchet
Affiliation:
University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627
Get access

Abstract

The present work is concerned with Er-doped oxidized porous silicon (PS). The characteristic feature of the work is that PS doping has been realized by an electrochemical procedure followed by a high temperature treatment. 5-μm thick PS layers were formed on p-type Si of 0.3-Ohm-cm resistivity. Er incorporation was performed by a cathodic polarization of PS in a 0.1 M Er(NO3)3 aqueous solution. A high temperature treatment in an oxidizing ambient at 500-1000°C was utilized to provide either partial or total oxidation of PS:Er layers. X-ray microanalysis was used to study chemical composition of the samples. Photoluminescence (PL) and photoluminescence excitation (PLE) spectra were investigated. After the partial oxidation (in the temperature range of 600-800°C), weak Er3+-related PL at 1.53 ptm was observed. A high temperature anneal in Ar atmosphere at the temperature of 1100°C caused a significant increase in the Er3+-related PL intensity. Resonant features were observed in PLE spectra of fully oxidized PS. Five peaks at 381, 492, 523, 654 and 980 nm were revealed. The strongest excitation occurred at 381 and 523 nm. The excitation of different Er3+ energy levels, cross-relaxation interactions and emission due to the 4I13/2→4I15/2 transitions were considered. Application of the Er-doped oxidized PS for integrated optical waveguides is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 69
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Soref, R., MRS Bulletin, 23, 20 (1998).Google Scholar
2. Bondarenko, V., Varichenko, V., Dorofeev, A., Kazuchits, N., Labunov, V., Stelmah, V., Tech. Phys.Lett., 19, 463 (1993).Google Scholar
3. Bondarenko, V., Dorofeev, A., Kazuchits, N., Microelectron. Engineering, 28, 447 (1995).Google Scholar
4. Kimura, T., Yokoi, A., Horiguchi, H., Saito, R., Ikoma, T., Sato, A., Appl. Phys. Lett., 65, 983 1994).Google Scholar
5. Tsybeskov, L., Duttagupta, S., Hirschman, K., Fauchet, P., Moore, K., Hall, D., Appl.Phys.Lett., 70,1790 (1997).Google Scholar
6. Lopez, H., Chan, S., Tsybeskov, L., Fauchet, P., and Bondarenko, V., this volume.Google Scholar
7. Cullis, A., Canham, L., and Calcott, P., J.Appl.Phys., 82, 909 (1997).Google Scholar
8. Polman, A., J.Appl.Phys., 82, 1 (1997).Google Scholar
9. Stepikhova, M., Jantsch, W., Kocher, G., Palmetshofer, L., Schoisswohl, M., Bardeleben, H., Appl. Phys.Lett., 71, 2975 (1997).Google Scholar
10. Kojan, T., Kuznetzova, V., Pershukevich, P., Sergeev, I., Homenko, V., J.Appl.Spectroscopy, 63, 992 (1996).Google Scholar