Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-06-02T10:42:37.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation Energy of Interstitial Si in Au-Doped Si

Published online by Cambridge University Press:  10 February 2011

Masashi Suezawa
Masashi Suezawa*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, JAPAN, suezawa@imrtuns.imr.tohoku.ac.jp
Get access

Abstract

In this report, we proposed that complexes responsible for optical absorption lines in Si grown in a hydrogen (H) atmsophere were composed of interstitial Si and H atoms and then determined the formation energy of interstitial Si in Au-doped Si from the measurements of optical absorption due to H bound to interstitial Si. In the first experiment, specimens were grown in a hydrogen atmosphere. In the second experiment, Si crystals were doped with Au by a vapor method; namely, specimens were sealed in quartz capsules together with a piece of Au wire and then annealed at high temperature followed by quenching in water. Then the specimens were doped with H by annealing them in hydrogen atmosphere of 1 atm. followed by quenching. We measured optical absorption of those specimens. From the effect of impurity on the optical absorption spectra of Si grown in a hydrogen atmosphere, we concluded that those optical absorption lines, including 2223 cm−1line, were due to complexes of interstitial Si and H. From the temperature dependence of the intensity of 2223 cm−1line, the formation energy of interstitial Si in Au-doped Si was determined to be about 2.1 eV

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 15
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pankove, J. I., Carlson, D. E., Berkeyheiser, J. E., and Wance, R. O., Phys. Rev. Lett. 51, p. 2,224 (1983)Google Scholar
2. As a review article, Hydrogen in Semiconductors. eds. Pankove, J. I. and Johnson, N. M., Academic Press, Inc., San Diego, 1991 Google Scholar
3. As a review article, Pearton, S. J., Corbett, J. W. and Stavola, M., Hydrogen in Crystalline Semiconductors, Springer-Verlag, Berlin, 1992 Google Scholar
4. As a review article, Estreicher, S. K., Mate. Sci. and Engi. R14, p. 319 (1995)Google Scholar
5. Stein, H.J., J. Elect. Mat. 4, p. 159 (1975)Google Scholar
6. Bech Nielsen, B., Hoffman, L. and Budde, M., Mate. Sci. and Engi. B36, p. 259 (1996)Google Scholar
7. Budde, M., Bech Nielsen, B., Leary, P., Goss, J., Jones, R., Briddon, P.R., Oberg, S. and Breuer, S. J.: Mate. Sci. Forum 258–263, p. 35 (1997)Google Scholar
8. Shi, T. S., Xie, L. M., Bai, G. R. and Qi, M. W., Phys. Stat. Sol. (b) 131, p. 511 (1985)Google Scholar
9. Xie, L. M., Qi, M. W. and Chen, J. M., J. Phys. C3, p. 8,519 (1991)Google Scholar
10. Cui, S. F., Mai, Z. H. and Qian, L. Z., Scientia Scinica A 27, p. 213 (1984)Google Scholar
11. Gerasimenko, N. N., Rolle, M., Cheng, L. J., Lee, Y. H., Corelli, J. C. and Corbett, J. W., Phys. Stat. Sol. (b) 90, p. 689 (1978)Google Scholar
12. Mukashev, B. N., Nussupov, K. H. and Tamendarov, M. F., Phys. Lett. 72A, p. 381 (1979)Google Scholar
13. Abe, T., Oyo Butsuri ( in Japanese) 59, p. 272 (1990)Google Scholar
14. Bai, G. R., Qi, M. W., Xie, L. M. and Shi, T. S., Solid State Commu. 56, p. 277 (1985)Google Scholar
15. Bech Nielsen, B., Olajos, J. and Grimmeiss, H. G., Phys. Rev. B39, p. 3,330 (1989)Google Scholar
16. Doeller, A., Seibt, M. and Schroeter, M., Silicon Materials Science and Technology, edited by Huff, H. R., Bergholz, W. and Sumino, K. (Semicon. Silicon/1994, Pennington, NJ, 1995), p.603–612 Google Scholar