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Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film

Published online by Cambridge University Press:  31 January 2011

Takanori Kiguchi
Affiliation:
tkiguchi@imr.tohoku.ac.jp, Tohoku University, Institute for Materials Research, Sendai, Japan
Kenta Aoyagi
Affiliation:
k-aoyagi@imr.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Japan
Toyohiko J. Konno
Affiliation:
tjkonno@imr.tohoku.ac.jp, Tohoku University, Institute for Materials Research, Sendai, Miyagi, Japan
Satoru Utsugi
Affiliation:
utsugi.s.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Yokohama, Kanagawa, Japan
Tomoaki Yamada
Affiliation:
yamada.t.al@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Yokohama, Kanagawa, Japan
Hiroshi Funakubo
Affiliation:
funakubo@mte.biglobe.ne.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Yokohama, Kanagawa, Japan
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Abstract

The nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Emelyanov, A. Yu. and Pertsev, N. A., Phys. Rev. B 68, 214103 (2003).Google Scholar
2 Ide, Takashi, Sakai, Akira, and Shimizu, Keiji, Thin Solid Films, 357, 22 (1999)Google Scholar
3 Robertson, M.D., Currie, J.E., Corbett, J.M., and Webb, J.B., Ultramicroscopy, 58, 175 (1998).Google Scholar
4 Hÿtch, M.J., Snoeck, E., and Kilaas, R., Ultramicroscopy, 74, 131 (1998).Google Scholar
5 Nagashima, K., Aratani, M., and Funakubo, H., Jpn. J. Appl. Phys. Part 2, 39, L996 (2000).Google Scholar
6 Nagashima, K. and Funakubo, H., Jpn. J. Appl. Phys. Part 1, 39, 212 (2000).Google Scholar
7 Theis, C.D. and Schlom, D.G., J. Mater. Res. 12, 1297 (1997)Google Scholar
8 GAO, Y., BAI, G., MERKLE, K.L., CHANG, H.L.M., LAM, D.J., Thin Solid Films, 235, 86 (1993).Google Scholar
9 Stemmer, S., Streiffer, S. K., Ernst, F., Rühle, M., phys. stat. sol. (a) 147, 135 (1995).Google Scholar
10 Hu, S. Y., Li, Y. L., and Chen, L. Q., J. Appl. Phys. 94, 2542 (2003).Google Scholar