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Growth and Photoluminescence of Strained < 110 > Si/SilxGex/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

C. W. Liu ,
J.C. Sturm ,
Y. R. J. Lacroix ,
M. L. W. Thewalt  and
D. D. Perovic
C. W. Liu
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
Y. R. J. Lacroix
Affiliation:
Simon Fraser University, Department of Physics, British Columbia V5A 1S6, Canada
M. L. W. Thewalt
Affiliation:
Simon Fraser University, Department of Physics, British Columbia V5A 1S6, Canada
D. D. Perovic
Affiliation:
University of Toronto, Department of Metallurgy and Material Science, Toronto, Ontario M5S 1A4, Canada
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Abstract

We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si1–xGex alloy layers on < 110 > Si substrates. Compared to < 100 > Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si1–x.Gex on < 110 > Si for 0.16 ≤ x ≤ 0.43 is determined and compared to theory. A strong “no-phonon” emission process in photoluminescence spectra of strained < 110 > Si/Si1–x.Gex/Si was observed as compared with that observed in < 100 > layers. Finally, quantum confinement shift of Si/Si0.71 Ge0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 Å to 17 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 37
Copyright
Copyright © Materials Research Society 1994

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References

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